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http://dx.doi.org/10.4313/JKEM.2014.27.5.276

Metal-Oxide-Semiconductor Photoelectric Devices  

Kang, Kilmo (Department of Electrical Engineering, Incheon National University)
Yun, Ju-Hyung (Department of Electrical Engineering, University at Buffalo, State University of New York)
Park, Yun Chang (Measurement and Analysis Division, National Nanofab Center (NNFC))
Kim, Joondong (Department of Electrical Engineering, Incheon National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.5, 2014 , pp. 276-281 More about this Journal
Abstract
A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.
Keywords
Metal-oxide-semiconductor; Schottky junction; Silicon; Metal(Ag, Ni);
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