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http://dx.doi.org/10.4313/JKEM.2009.22.12.1014

A Study on the Development of Chalcogenide-based ReRAM{Resistance RAM) Device with Holographic Lithography Method  

Nam, Ki-Hyun (광운대학교 전자재료공학과)
Chung, Hong-Bay (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.12, 2009 , pp. 1014-1017 More about this Journal
Abstract
In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.
Keywords
PMC; ReRAM; Chalcogenide; Solid-electrolyte; Holographic lithography;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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