• Title/Summary/Keyword: Electronic devices

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The surface propery change of multi-layer thin film on ceramic substrate by ion beam sputtering (이온빔 스퍼터링법에 의한 다층막의 표면특성변화)

  • Lee, Chan-Young;Lee, Jae-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.259-259
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    • 2008
  • The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

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High Breakdown-Voltage AlGaN/GaN High Electron Mobility Transistor having a Trapezoidal Gate Structure (사다리꼴 게이트 구조를 갖는 고내압 AlGaN/GaN HEMT)

  • Kim, Jae-Moo;Kim, Su-Jin;Kim, Dong-Ho;Jung, Kang-MIn;Choi, Hong-Goo;Hahn, Cheol-Koo;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.10-14
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    • 2009
  • We propose a trapezoidal gate AlGaN/GaN high electron mobility transistor(HEMT) to improve the breakdown voltage characteristics and its feasibility is investigated by two-dimensional device simulations. The use of a trapezoidal gate structure appears to be quite effective in dispersing the electric fields concentrated near the gate edge on the drain side from the simulation result. We find that a peak value of the electric field along the 2-DEG channel is reduced by 30%, from 4.8 to 3.5 MV/cm and thereby, the breakdown voltage(Vbr) of the proposed AlGaN/GaN HEMT is increased by about 40%, from 49 to 69 V, compared to those of the standard AlGaN/GaN HEMT.

A High Data Rate Medical Implant Communication System Transmitter for Body Implantable Devices (체내이식용 기기를 위한 고속 MICS 송신기 구현)

  • Im, Jun-Ha;Jung, Yun-Ho;Kim, Jae-Seok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.4
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    • pp.24-31
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    • 2011
  • A high data rate Medical Implant Communications Service (MICS) transmitter for implantable medical devices (IMD) is proposed. An orthogonal frequency division multiplexing (OFDM)-based multicarrier scheme is used to overcome the data rate limitation caused by the narrow bandwidth of 300 kHz. The proposed transmitter utilizes multiple MICS channels simultaneously, supporting increased data rate. To satisfy the MICS regulation, various schemes are applied including optimized subcarrier allocation and inverse fast Fourier transform (IFFT) architecture, and additional sidelobe suppression technique. Simulation results show that the proposed transmitter can support a maximum data rate of 4.86 Mbps, which is more than ten times faster than the previous systems.

Implementation of Mobile Authentication System for Context-Awareness based on Near Field Communication (근거리 통신 기반의 상황 인식을 위한 모바일 인증 시스템의 구현)

  • Park, Hung-Bog;Seo, Jung-Hee
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.1
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    • pp.39-46
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    • 2017
  • Today, mobile devices are becoming essential for everyday life, and integration of mobile computing, situation recognition and intellectual service accelerates mobile interaction. Surrounding intelligence detection technology is extremely important. These technologies can automatically acquire and recognize surrounding information and situations. Situation recognition can realize wide-range mobile recognition for intellectual services of users' diverse activities, by distinguishing many surrounding devices and recognizing their situations. Thus, this paper suggests application for students' mobile authentication such as college campus attendance authentication, and redesign existing plastic student ID as NFC-compatible mobile authentication system. Experiment results proved NFC-compatible mobile touch-based interactions can maximize the strengths of NFC technology because it can recognize limits in some situations such as tardiness and absences by automating student validation and preventing far-distance reading.

Geometrical QC/QA for Medical Linear Accelerator using Electronic Portal Imaging Devices(EPID) (전자포탈영상장치 (EPID)를 이용한 선형가속기의 기하학적인 QC/QA)

  • Lee, Seok;Lee, Byung-Yong;Cho, Jung-Gil;Kwon, Soo-Il;Jung, Won-Kyu;Kim, Jong-Hoon
    • Progress in Medical Physics
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    • v.8 no.2
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    • pp.59-65
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    • 1997
  • We have designed the software for geometrical QC/QA for medical linear accelerator using electronic portal imaging devices (EPID). The radiation-light field congruence, the collimator rotation axis, and the gantry rotation axis could be estimated with this software. Precision of the system is within 1mm. The collimator and the gantry rotation axis could be measured by superpositioning the images from 4 different collimator (or gantry) angles. The EPID system and the analysis software which was developed in this study make it possible that the quantitative and the objective geometrical QC/QA of the linear accelerator.

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Design and evaluation of an experimental system for monitoring the mechanical response of piezoelectric energy harvesters

  • Kim, Changho;Ko, Youngsu;Kim, Taemin;Yoo, Chan-Sei;Choi, BeomJin;Han, Seung Ho;Jang, YongHo;Kim, Youngho;Kim, Namsu
    • Smart Structures and Systems
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    • v.22 no.2
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    • pp.133-137
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    • 2018
  • Increasing interest in prognostics and health management has heightened the need for wireless sensor networks (WSN) with efficient power sources. Piezoelectric energy harvesters using Pb(Zr,Ti)O3 (PZT) are one of the candidate power sources for WSNs as they efficiently convert mechanical vibration energy into electrical energy. These types of devices are resonated at a specific frequency, which has a significant impact on the amount of energy harvested, by external vibration. Hence, precise prediction of mechanical deformation including modal analysis of piezoelectric devices is crucial for estimating the energy generated under specific conditions. In this study, an experimental vibrational system capable of controlling a wide range of frequencies and accelerations was designed to generate mechanical vibration for piezoelectric energy harvesters. In conjunction with MATLAB, the system automatically finds the resonance frequency of harvesters. A small accelerometer and non-contact laser displacement sensor are employed to investigate the mechanical deformation of harvesters. Mechanical deformation under various frequencies and accelerations were investigated and analyzed based on data from two types of sensors. The results verify that the proposed system can be employed to carry out vibration experiments for piezoelectric harvesters and measurement of their mechanical deformation.

Characterization of photonic quantum ring devices manufactured using wet etching process (습식 식각 공정을 이용하여 제작된 광양자테 소자의 특성 분석)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin
    • Journal of Convergence for Information Technology
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    • v.10 no.6
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    • pp.28-34
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    • 2020
  • A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

Statistical analysis of the emotional labor of firefighters using smart devices (스마트기기 사용에 따른 소방관의 감정노동 통계분석)

  • Shin, Ji-Hun;Park, Bu-Yeon;Lee, Jae-Hong;Song, Sul-Kung
    • The Journal of the Korea institute of electronic communication sciences
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    • v.10 no.11
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    • pp.1297-1306
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    • 2015
  • The introduction of multimedia 119-notification service utilizing smart devices causes firefighters to be more exposed to emotional labor. The purpose of this study is to investigate the effect of increased emotional labor of firemen on job satisfaction. As a result, the higher the emotional labor of firefighters is, the higher job stress (${\beta}=0.166$, p=0.000) and social support(${\beta}=0.540$, p=0.000) are. But job satisfaction tends to be lower(${\beta}=-0.136$, p=0.000). As they play an important role to protect the safety and property of citizens. their job satisfaction becomes the driving force of their duty. Therefore, we think that some systematic and substantial prevention curriculum to manage their emotional labor is required.

Radiation effects of I-V characteristics in MOS structure irradiated under $Co^{60}-{\gamma}$ ray ($Co^{60}-{\gamma}$ ray을 조사시킨 MOS 구조에서의 I-V특성의 방사선 조사 효과)

  • Kwon, S.S.;Jeong, S.H.;Lim, K.J.;Ryu, B.H.;Kim, B.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.123-127
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    • 1992
  • When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

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Deterioration Characteristics and an On-Line Diagnostic Equipment for Surge Protective Devices (서지 보호기의 열화 특성과 온라인 진단장치)

  • Park, Kyoung-Soo;Wang, Guoming;Hwang, Seong-Cheol;Kim, Sun-Jae;Kil, Gyung-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.10
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    • pp.635-640
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    • 2016
  • This paper dealt with the deterioration characteristics and an on-line diagnosis equipment for SPDs (surge protective devices). An accelerated aging test was carried out using a $8/20{\mu}s$ standard lightning impulse current to analyze the changes of electrical characteristics and to propose the diagnostic parameters and the criterion for deterioration of ZnO varistor which is the core component of SPDs. Based on the experimental results, an on-line diagnosis equipment for SPD was fabricated, which can measure the total leakage current, reference and clamping voltage. The leakage current measurement circuit was designed using a low-noise amplifier and a clamp type ZCT. A linear controller, the leakage current measurement part and a HVDC were used in the measurement of reference voltage. The measurement circuit of clamping voltage consisted of a surge generator and a coupling circuit. In a calibration process, measurement error of the prototype equipment was less than 3%.