• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.905-909
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• 2009

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.612-615
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• 2009

We need to control the growth orientation of CNTs on a substrate for applications to various electric devices. Generally, the flow direction of feed gases and electric field between two electrode affect to growth orientations of CNTs. In this paper, we varied tilt degrees $(0^{\circ},\;20^{\circ},\;35^{\circ},\;50^{\circ},\;65^{\circ},\;90^{\circ})$ of substrates on a cathode and DC bias voltages (0, 500, 700 V) applied between two electrodes in order to change growth orientations of CNTs. We confirmed that tilt degrees of the substrate and variation of DC bias voltages affected to the shape and orientation of the grown CNTs on the substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.602-605
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• 2009

The heat generation in the high-$T_c$ superconducting (HTS) wire is related with the cost efficiency and safe factor of HTS devices. This paper deals with the thermal quench at the conduction-cooled joint between HTS wire and copper terminals. The 3-D numerical simulation of thermal distributions in part of the copper terminals was implemented and the premature quench at copper block was observed through the test. The results will be helpful to design the conduction-cooled HTS magnets.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1095-1099
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• 2009

As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study showed that the D peak (wave length : ${\sim}1,350\;cm^{-1}$) of graphene was minimized and then the 2D one (wave length : ${sim}2,700\;cm^{-1}$) appeared when rapid thermal anneal is carried out with the $C_2H_2$ treated nickel film. This study demonstrates that a high quality FLG formed at a low temperature of $400^{\circ}C$ is applicable as CMOS devices and transparent electrode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.148-151
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• 2017

This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.713-719
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.720-725
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.9
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• pp.1302-1307
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• 2013

MOV(Metal Oxide Varistor) is the most important part of SPD(Surge Protective Device) which can protect electric facilities from an impulse current such as a lightning. So far, the fault of MOVs have decided only by surge count without considering magnitude of surge current and an amount of input energy. This paper proposed the fault prediction algorithm for the MOV using look up table made by surge count and input current data which have non-linear characteristics for input current and are estimated by high voltage experimental results. Proposed algorithm was proved by experiment on verification at a high voltage laboratory.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.8
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• pp.1222-1229
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• 2017

In this paper, a wireless power transfer system with semi-random magnetic flux is studied. Directions of semi-random magnetic flux are changing almost randomly which can induce voltages at coils irrelevantly to coil's posture. So, very convenient charging is possible. Semi-random magnetic flux can be generated by a coil system which has three coils perpendicular to each other and carrying currents with different frequencies. A prototype for charging mobile devices is constructed and tested, and the proposal is verified.

• Journal of Korea Multimedia Society
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• v.21 no.8
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• pp.942-951
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• 2018

In these days, 360 degree videos, which is provided via VR, have high resolution and quality of 8K. These kinds of videos inevitably require streaming technology which guarantees QoS. Therefore, we suggest MPEG DASH HTTP protocol which stably provides streaming services of high quality videos in 8K, which are 360 degree tile-encoded, on low-spec devices such as OTT and IPTV Settop and Tile Segment Cache management structure for servers operating streaming services.