Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Graphene Synthesis by Low Temperature Chemical Vapor Deposition and Rapid Thermal Anneal

저온 화학기상증착법 및 급속가열 공정을 이용한 그래핀의 합성

  • 임성규 (나노종합팹센터 나노공정기술부) ;
  • 문정훈 (한국과학기술원 전자전산학부) ;
  • 이희덕 (충남대학교 전자공학과) ;
  • 유정호 (나노종합팹센터 나노공정기술부) ;
  • 양준모 (나노종합팹센터 나노공정기술부) ;
  • 왕진석 (충남대학교 전자공학과)
  • Published : 2009.12.01
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Abstract

As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study showed that the D peak (wave length : ${\sim}1,350\;cm^{-1}$) of graphene was minimized and then the 2D one (wave length : ${sim}2,700\;cm^{-1}$) appeared when rapid thermal anneal is carried out with the $C_2H_2$ treated nickel film. This study demonstrates that a high quality FLG formed at a low temperature of $400^{\circ}C$ is applicable as CMOS devices and transparent electrode materials.

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References

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