Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Synthesis of CNTs with Plasma Density and Tilt Degree of Substrate

플라즈마 밀도와 기판의 기울임 정도에 따른 탄소나노튜브의 성장

  • 최은창 (성균관대학교 정보통신공학부) ;
  • 김경욱 (성균관대학교 정보통신공학부) ;
  • 홍병유 (성균관대학교 정보통신공학부)
  • Published : 2009.07.01
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Abstract

We need to control the growth orientation of CNTs on a substrate for applications to various electric devices. Generally, the flow direction of feed gases and electric field between two electrode affect to growth orientations of CNTs. In this paper, we varied tilt degrees $(0^{\circ},\;20^{\circ},\;35^{\circ},\;50^{\circ},\;65^{\circ},\;90^{\circ})$ of substrates on a cathode and DC bias voltages (0, 500, 700 V) applied between two electrodes in order to change growth orientations of CNTs. We confirmed that tilt degrees of the substrate and variation of DC bias voltages affected to the shape and orientation of the grown CNTs on the substrate.

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References

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