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http://dx.doi.org/10.4313/JKEM.2009.22.12.1095

Graphene Synthesis by Low Temperature Chemical Vapor Deposition and Rapid Thermal Anneal  

Lim, Sung-Kyu (나노종합팹센터 나노공정기술부)
Mun, Jeong-Hun (한국과학기술원 전자전산학부)
Lee, Hi-Deok (충남대학교 전자공학과)
Yoo, Jung-Ho (나노종합팹센터 나노공정기술부)
Yang, Jun-Mo (나노종합팹센터 나노공정기술부)
Wang, Jin-Suk (충남대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.22, no.12, 2009 , pp. 1095-1099 More about this Journal
Abstract
As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study showed that the D peak (wave length : ${\sim}1,350\;cm^{-1}$) of graphene was minimized and then the 2D one (wave length : ${sim}2,700\;cm^{-1}$) appeared when rapid thermal anneal is carried out with the $C_2H_2$ treated nickel film. This study demonstrates that a high quality FLG formed at a low temperature of $400^{\circ}C$ is applicable as CMOS devices and transparent electrode materials.
Keywords
Graphene; CVD; RTA; $C_2H_2$; Raman spectroscopy;
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