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http://dx.doi.org/10.4313/JKEM.2017.30.3.148

The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Power Devices  

Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.3, 2017 , pp. 148-151 More about this Journal
Abstract
This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.
Keywords
Power device; Breakdown voltage; Field ring; Super high voltage; On state voltage drop;
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