• Title/Summary/Keyword: Electronic devices

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Effect of RF Sputtering Conditions on Properties of Thin Film Resistor for Microwave Device (초고주파용 박막저항의 특성에 미치는 RF 스파터링 조건의 영향)

  • Ryu, Sung-Rok;Koo, Bon-Keup;Kang, Beong-Don;Ryu, Jei-Chun;Kim, Dong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.913-917
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    • 2003
  • In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

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The RF performance degradation in Bulk DTMOS due to Hot Carrier effect (Hot Carrier 현상에 의한 Bulk DTMOS의 RF성능 저하)

  • Park Jang-Woo;Lee Byoung-Jin;Yu Jong-Gun;Park Jong-Tae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.2 s.332
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    • pp.9-14
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    • 2005
  • This paper reports the hot carrier induced RF performance degradation of bulk dynamic threshold voltage MOSFET (B-DTMOS) compared with bulk MOSFET (B-MOS). In the normal and moderate mode operations, the degradations of cut-off frequency $(f_{T})$ and minimum noise figure $(F_{min})$ of B-DTMOS are less significant than those of B-MOS devices. Our experimental results show that the RF performance degradation is more significant than the U performance degradation after hot carrier stressing. Also, the degradation characteristics of RF power Performance of B-DTMOS due to hot carrier effects are measured for the first time.

Bending Characteristic of a Flexible Antenna (Flexible Antenna의 Bending 특성)

  • Kim, Ho-Jin;Lee, Seon-Hyeon;Lee, Young-Hun;Lee, Sang-Seok
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.9
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    • pp.888-896
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    • 2011
  • In this paper, we studied characteristics of the bent antenna febricated on Flexible-PCB. Flexible-PCB consisting of a polyimide has dielectric constant 3.5, thickness 0.125 mm. Proposed antennas which operates at Bluetooth band are a rectangular loop antenna and a loop antenna with inverted-L type stub. We compared the input matching and radiation characteristics of the proposed antennas under eight kinds of bending conditions.

Study on the Photoelectric Composite Cable for Hybrid Interconnection Implementation (Hybrid 인터커넥션 구현을 위한 광전 복합케이블 제작에 관한 연구)

  • Kim, Jae-Yeol;You, Kwan-Jong;Park, Ryeok
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.16 no.3
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    • pp.138-145
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    • 2017
  • With the increasing use of smart electronic devices, the size of the related I/O interface market is increasing rapidly. Demand is also growing for the continuous increase of data and video signals-such as faster data processing speed and data storage capacity-in the smart electronic device input/output interface market. Currently, the POF hybrid cable used in the smart electronic device input / output interface market cannot transmit over a long distance because the optical loss is too large, and the GOF hybrid cable is both vulnerable to bending and other sudden outside changes, and expensive. Therefore, in this study, the design and fabrication of a GOF hybrid cable and fiber guide were carried out in order to develop a cable which can easily withstand external impact, has low optical losses, and meets the demand for continuous data and video signal increase in the smart electronic device input / output interface market.

Automatic Multileaf Collimation Quality Assurance for IMRT using Electronic Portal Imaging

  • Jin, Ho-Sang;Jason W. Sohn;Suh, Tae-Suk
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2002.09a
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    • pp.305-308
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    • 2002
  • More complex radiotherapy techniques using multi leaf collimation(MLC) such as intensity-modulated radiation therapy(IMRT) has been increasing the significance of verification of leaf position and motion. Due to the reliability and robustness, quality assurance(QA) of MLC is usually performed with portal films. However, the advantage of ease of use and capability of providing digital data of electronic portal imaging devices(EPIDs) have attracted many attentions as alternatives of films for routine quality assurance in spite of the concerns about their clinical feasibility, efficacy, and the cost to benefit ratio. In our work, the method of routine QA of MLC using electronic portal imaging(EPI) was developed. The verification of availability of EPI images for routine QA was performed by comparison with those of the portal films which were simultaneously obtained when radiation was delivered and known prescription input to MLC controller. Specially designed test patterns of dynamic MLC were applied to image acquisition. Quantitative off-line analysis using edge detection algorithm enhanced the verification procedure in addition to on-line qualitative visual assessment. In conclusion, the EPI is available enough for routine QA with the accuracy of portal films.

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A Belay Prevention Algorithm of Cardiac Depolarization Wave Detection for Pacemakers or Automatic Implantable Cardioverter/Defibrillator (AICD) (이식용 심장박동기(Pacemaker) 및 심장 세동제거기 (AICD)를 위한 심장 탈분극파 검출지연 방지 알고리즘)

  • Kim, J.K.;Park, C.K.;Han, S.H.;Cho, B.S.;Huh, W.
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.1063-1066
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    • 1999
  • The delay of cardiac depolarization wave detection in the conventional pacemakers or AICD (automatic implantable cardioverter/ defibrillator, or ICD) has been overlooked. However, it is known that the delay may cause hemodynamic problems and may prevent the proper operation of a new automatic feature, automatic capture verification, that is to be appeared in the near-future devices. In order to reduce the effects of the delay, a delay prevention algorithm was developed and tested by applying three human electrograms. The algorithm set the sensing threshold just above the measured noise level to reduce the detection delay. It is found that the low threshold was able to reduce the delay by 20msec(average) In most cases. The implementation results showed reliability and efficacy of the algorithm, and the algorithm could be applicable to the existing hardware and software of the conventional pacemakers and AICD without any significant modifications.

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Development of Process and Equipment for Roll-to-Roll convergence printing technology

  • Kim, Dong-Su;Bae, Seong-U;Kim, Chung-Hwan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.19.1-19.1
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    • 2010
  • The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

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Performance Improvement of Amorphous In-Ga-Zn-O Thin-film Transistors Using Different Source/drain Electrode Materials (서로 다른 소스/드레인 전극물질을 이용한 비정질 In-Ga-Zn-O 박막트랜지스터 성능향상)

  • Kim, Seung-Tae;Cho, Won-Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.69-74
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    • 2016
  • In this study, we proposed an a-IGZO (amorphous In-Ga-Zn-O) TFT (thin-film transistor) with off-planed source/drain structure. Furthermore, two different electrode materials (ITO and Ti) were applied to the source and drain contacts for performance improvement of a-IGZO TFTs. When the ITO with a large work-function and the Ti with a small work-function are applied to drain electrode and source contact, respectively, the electrical performances of a-IGZO TFTs were improved; an increased driving current, a decreased leakage current, a high on-off current ratio, and a reduced subthreshold swing. As a result of gate bias stress test at various temperatures, the off-planed S/D a-IGZO TFTs showed a degradation mechanism due to electron trapping and both devices with ITO-drain or Ti-drain electrode revealed an equivalent instability.

Optimization of 70nm nMOSFET Performance using gate layout (게이트 레이아웃을 이용한 70nm nMOSFET 초고주파 성능 최적화)

  • Hong, Seung-Ho;Park, Min-Sang;Jung, Sung-Woo;Kang, Hee-Sung;Jeong, Yoon-Ha
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.581-582
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    • 2006
  • In this paper, we investigate three different types of multi-fingered layout nMOSFET devices with varying $W_f$(unit finger width) and $N_f$(number of finger). Using layout modification, we improve $f_T$(current gain cutoff frequency) value of 15GHz without scaling down, and moreover, we decrease $NF_{min}$(minimum noise figure) by 0.23dB at 5GHz. The RF noise can be reduced by increasing $f_T$, choosing proper finger width, and reducing the gate resistance. For the same total gate width using multi-fingered layout, the increase of finger width shows high $f_T$ due to the reduced parasitic capacitance. However, this does not result in low $NF_{min}$ since the gate resistance generating high thermal noise becomes larger under wider finger width. We can obtain good RF characteristics for MOSFETs by using a layout optimization technique.

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RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q.;Yu, A.B.;Karim, M.F.;Tang, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.166-176
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    • 2007
  • Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.