• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.18-22
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• 2006

Epitaxial aluminum nitride films on 6H-SiC (0001) were fabricated using reactive RF magnetron sputtering and post-deposition rapid thermal annealing. The electrical properties of AIN films depending on film thickness and measurement temperature have been observed. Full width at half maximum of AIN (0002) was $0.1204^{\circ}$ (about 430 arcsec) X-ray rocking curve results. The equivalent oxide thickness (EOT) of AIN film was estimated as about 10 nm and the leakage current density was within the order of $10^{-8} 4/cm^2$. The dielectric constant of AIN film estimated from the accumulation region of C-V curve measured at $300^{\circ}C$ was 8.3. The dynamic dielectric constant was obtained as 5.1 from J vs. 1/T plots at the temperature ranging from R.T. to $300^{\circ}C$ From above, estimation temperature dependance of the electrical properties of Al/AIN/SiC MIS devices was affirmed and useful data compilation for the reliabilities of SiC MIS is expected.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1985.01a
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• pp.21-23
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• 1985

By adding La$_2$O$_3$ to optical multicomponent glass composition, after making mother glass and core fiber that enable to enlarge the infrared transmittance region, then surveyed the optical properties. Through thermal analysis of the glass abstained by melt-quenching after selecting stable basic composition on devitrification and replace SiO$_2$ by 4-12wt% La$_2$O$_3$. As La$_2$O$_3$ increases up to l2wt% transition temperature, refractive index, density, deformation temperature increased, whereas thermal expansion coefficient decreased. As a result of inspectig transmittance in UV/VIS/IR region, visable region indicated the decrease of transmittance by increasing the La$_2$O$_3$ and transmittance region was enlarged by increasing the La$_2$O$_3$ in IR region. Also, fabricate core fiber at 820$^{\circ}C$ and severy the optical loss we could fact that La$_2$O$_3$ composition added 12wt% showed the minimum optical loss.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.48-52
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• 2014

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.924-927
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• 2013

In this study, we proposed CMP-PLAs to replace the Al heat sinks as heat sink materials, and investigated heat dissipation characteristics of the LED lighting devices using them. The crystallinity of the proposed CMP-PLA heat sinks decreased with increasing carbon nanotube contents in CMP-PLA. However, the thermal conductivity was improved with the increase of the carbon nanotube contents. The heat dissipation characteristics of the LED lighting devices using CMP-PLA heat sinks was improved with increasing carbon nanotube contents in CMP-PLA. For the LED lighting devices using CMP-PLA heat sinks with 40% carbon nanotube contents, the initial temperature measured at the heat sink plate was $27^{\circ}C$, which increased as time, and it was saturated around $56^{\circ}C$ after an hour. The LED lighting devices using CMP-PLA heat sinks are expected to be functional materials that can reduce their weight and improve their electric properties, compared to those using existing Al heat sinks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1065-1070
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• 2003

HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.278-278
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• 2007

Ag conductive thick film has been used in bus and address electrodes of PDP (Plasma display panel). In PDP fabrication, the firing temperature of electrode is normally $550{\sim}580^{\circ}C$. For the application of PDP industry, we investigated an Ag conductive thick film with firing temperature. Low melting glass frit was used in the conductive thick film. The thermal properties of Ag and frit were determined by a hot stage microscopy. Based on the our results, we suggest that the Ag conductive thick film should be considered of the firing temperature which is correlated to the shrinkage, conductivity, and shape of thick film.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.201-203
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• 2016

Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10⁻⁵ Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10⁻⁵ Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.226-227
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• 2007

Nanostructured materials are attracting increased interest and application. Exciting perspectives may be offered by electrical insulation. Epoxy/Organoclay nanocomposites may find new and upgraded applications in the electrical industry, replacing conventional insulation to provide improved performances in electric power apparatus, e.g, high voltage motor/generator stator winding insulation, dry mold transformer, etc. This paper shows that electrical and thermal properties of epoxy/organoclay nanocomposites insulating materials for dsc, dielectric constant, I-V characteristics, breakdown volatge, can improve significantly with respect to the basic, virgin materials.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1117-1122
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• 1999

Amorphous Si and Co/Ti bilayers were sequentially evaporated onto 5- 10nm thick $\textrm{CoSi}_{2}$ and rapidly thermal-annealed(RTA) to form Co-polycide electrodes. Then, MOS capacitors were fabricated by doping poly-Si using SADS method. The C-V and leakage-current characteristics of the capacitors depending upon the RTA conditions were measured to study the effects of thermal stability of $\textrm{CoSi}_{2}$ and dopant redistribution on electrical properties of Co -polycide gates. Capacitors RTAed at $700^{\circ}C$ for 60-80 sec., showed excellent C-V and leakage-current characteristics due to degenate doping of poly-Si layers. But for longer time or at higher temperature, their electrical properties were degraeded due to $\textrm{CoSi}_{2}$ decomposition and subsequent Co diffusion. When making Co-polycide gate electrodes by SADS, not only degenerate doping of poly-Si layer. but also suppression of have been shown to be very critical.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.803-806
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• 2011

1 mol% $Li_2O$ excess $0.9(Na_{0.52}K_{0.48})NbO_3-0.1LiTaO_3$ lead-free piezoelectric multilayer ceramic actuators were investigated to determine their aging properties. To reduce the thermal aging behavior, we applied a rectified unipolar electric field of 5 kV/mm to the specimen to accelerate the electric aging behavior. By employing a rectified unipolar electric field for the piezoelectric actuators, we could remove undesirable heating from the relaxation current in the motion of the ferroelectric domain. To accelerate the aging test, the applied electric fields had a frequency of 900 Hz. To have enough time for charging and discharging, we employed an accurate time constant to design the equivalent circuit model for the aging tester. To extract exact aging behavior, we measured the pseudo-piezoelectric coefficient before and after the aging process. We also measured the electro-mechanical coupling coefficient, the frequency-dependent dielectric permittivity, and the impedance to compare with fresh and aged specimen.