[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2016.17.4.201

Effect of Thermal Annealing on the Electrical Properties of In-Si-O/Ag/In-Si-O Multilayer

Yu, Jiao Long (Department of semiconductor Engineering, Cheongju University)
Lee, Sang Yeol (Department of semiconductor Engineering, Cheongju University)

Publication Information

Transactions on Electrical and Electronic Materials / v.17, no.4, 2016 , pp. 201-203 More about this Journal

Abstract

Transparent conductive multilayers have been fabricated using transparent amorphous Si doped indium oxide (ISO) semiconductors and metallic Ag of ISO/Ag/ISO. The resistivity of a multilayer is dependent on the middle layer thickness of silver. The thickness of the Ag layer is fixed at 11 nm and takes into account cost and optical transmittance. As-deposited ISO/Ag (11 nm)/ISO multilayer shows a measured resistivity of 7.585×10⁻⁵ Ω cm. After a post annealing treatment of 400℃, the resistivity is reduced to 4.332×10⁻⁵ Ω cm. The reduction of resistivity should be explained that the mobility of the multilayer increased due to the optimized crystalline, meanwhile, the Hall concentration of the multilayer showed an obscure change because the carriers mainly come from the insert of the Ag layer.

Keywords

Si doped InO; Thermal annealing; Electrical property;

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