1 |
J. A. Cooper, Jr., 'Advances in SiC MOS Technology', Phys. Stat. Sol. (a), Vol. 162, No.1, p. 305, 1997
|
2 |
Dieter K. Schroder, 'Semiconductor Material and Device Characterization', 2nd Ed. John Wiley & Sons, p. 279, 1998
|
3 |
김용성, 김광호, '반응성 RF 마그네트론 스퍼터링법을 이용한 AIN/SiC 구조의 제작 및 특성', 전기전자재료학회논문지, 18권, 11호, p. 977, 2005
|
4 |
S. Strite and H. Morkoc, 'GaN, AIN, and InN: A review', J. Vac. Sci. Technol. (B), Vol. 10, No.4, p. 1237, 1992
|
5 |
S. M. Sze, 'Physics of Semiconductor Devices', John Wiley & Sons, Inc., New York, p. 402, 1981
|
6 |
I. Akasaki and M. Hashimoto, 'Infrared lattice vibration vapour-grown AIN', Solid State Commun., Vol. 5, No. 11, p. 851, 1967
DOI
ScienceOn
|
7 |
J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, jr., '6H-silicon carbide devices and applications', Physica E, Vol. 185, No. 1-4, p. 461, 1993
DOI
ScienceOn
|
8 |
P. G. Neudeck, 'Silicon carbide electronic devices', Encyclopedia of Materials: Science and Technology, Elsevier Science Ltd., p. 8508, 2001
|