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http://dx.doi.org/10.4313/JKEM.2003.16.12.1065

Properties of Poly-Si TFT's using Oxide-Nitride-Oxide Films as Gate Insulators  

이인찬 (경상대학교 대학원 전기공학과 및 RICIC)
마대영 (경상대학교 전기전자공학부 및 RICIC)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.12, 2003 , pp. 1065-1070 More about this Journal
Abstract
HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.
Keywords
Poly-Si TFT; ONO; HTO; Leakage current;
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Times Cited By KSCI : 3  (Citation Analysis)
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