Properties of Poly-Si TFT's using Oxide-Nitride-Oxide Films as Gate Insulators |
이인찬
(경상대학교 대학원 전기공학과 및 RICIC)
마대영 (경상대학교 전기전자공학부 및 RICIC) |
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p-채널 poly-Si TFT's 소자의 hotcarrier 효과에 관한 연구
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과학기술학회마을 |
2 |
Amorphous Si electrons devices and atheir application
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3 |
Control of the performance of polysilicon thin-film transistors by high-gate-voltage stress
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DOI ScienceOn |
4 |
Low-temperature deposition of high quality silicon dioxide by plasma-enhanced chemical vapor deposition
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DOI |
5 |
A compact memory cell using MGI-TFT's for 16-Mb SRAM and beyond
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6 |
드레인오프셋트 다결정실리콘 박막트랜지스터의 누설전류 해석
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과학기술학회마을 |
7 |
Completerly integrated a-Si/a-SiC heterojunction contact type lineat image scnsor with poly-Si TFT drivers
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8 |
A high performance polysilicon TFT using RTA and plasma hydrogenation applicable to highly stable SRAM of 16M bit and beyond
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9 |
Electrical characteristics of MOSFER's unilizing oxygen-argon sputter-deposited gate oxide films
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DOI ScienceOn |
10 |
LDD 구조의 다결정 실리콘 박막트랜지스터의 특성
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과학기술학회마을 |
11 |
Low temperature poly-Si TFT's using solid phase crystallization of very thin film and electron cyclotron resonance chemical vapor deposition gate insulator
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DOI |
12 |
High performance polysilicon thin-film transistors using very thin sputtered gate dioxide films
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13 |
Peripheral circuit integrated poly-Si TFT LCD wuth gray scale representation
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DOI ScienceOn |
14 |
2-MHz clocked LCD drivers on glass
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DOI ScienceOn |
15 |
16-Mb SRAM cell technologies for 2.0V operation
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16 |
Device sensitivity of field-plated polysilicon high voltage TFT's and their application to low voltage opertion
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DOI ScienceOn |