• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.890-893
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• 2004

The ultra precision machining in industrial field are increased day by day. The diamond turning has been used generally, but now is faced with limitation of use, because of higher requirement of production field. The electron beam lithography is alternative in machining area as semiconductor production. For EB lithography, 5 axis vacuum stage is required to duplicate small and large patterns on wafer. The stage is composed of 2 rotational axis and 3 translational axis with 5 DC servo motors. The positioning repeatability and resolution of Z axis feed unit are 3.21$\mu$m and 0.5 $\mu$m/step enough to apply to lithography.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.743-747
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• 2007

There has been steady effect for the development of the electron-beam lithography technologies for the circuit patterning of the future semiconductor devices. In this study, we have performed a Monte-Carlo simulation whore $1{\times}10^4$ electrons with various kinetic energies (100eV, 300eV, 500eV, 700eV, and 1000eV) were shot into polymethyl methacrylate(PMMA) resist of 100-nm thickness. The penetration depth of each electron beam in the resist layer were analyzed using Gaussian analysis method.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.6
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• pp.7-13
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• 2009

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.182-192
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• 2003

A new Monte Carlo (MC) simulator for electron beam lithography process in the multi-layer resists and compound semiconductor substrates has been developed in order to fabricate and develop the high-speed PHEMT devices for millimeter-wave frequencies. For the accurate and efficient calculation of the transferred and deposited energy distribution to the multi-component and multi-layer targets by electron beams, we newly modeled for the multi-layer resists and heterogeneous multi-layer substrates. By this model, the T-shaped gate fabrication process by electron beam lithography in the PHEMT device has been simulated and analyzed. The simulation results are shown along with the SEM observations in the T-gate formation process, which verifies the new model in this paper.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.359-362
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• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.53-56
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• 2002

We have developed a Monte Carlo (MC) simulator for electron beam lithography in multi-layer resists and multi-layer substrates in order to fabricate and develop high-speed PHEMT devices for millimeter- wave applications. For the deposited energy calculation to multi-layer resists by electron beam in MC simulation, we modeled newly for multi-layer resists and heterogeneous multi-layer substrates. Using this model, we simulated T-gate or r-gate fabrication process in PHEMT device and showed our results with SEM observations.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.235-238
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• 2005

A Multiple electron beam lithography system with arrayed microcolumns has been developed for high throughput applications. The small size of the microcolumn opens the possibility for arrayed operation on a scale commensurate. The arrayed microcolumns based on of Single Column Module (SCM) concept has been fabricated and successfully demonstrated. Low energy microcolumn lithography has been operated in the energy range from 250 eV to 300 eV for the generation of nano patterns. Probe beam current at the sample was measured about >1 nA at a total beam current of $0.5\;{\mu}A$ and a working distance of $\~1\;mm$. The magnitude of probe beam current is strong enough for the low energy lithography. The thin layers of PMMA resist have been employed. The results of nano-patterning by low energy microcolumn lithography will be discussed.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.190-193
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• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.178-181
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• 2007

Electron beam lithography has been studied as a next-generation lithography technology instead of photo lithography for ULSI semiconductor devices. In this work, we have made a low-energy electron beam lithography system based on the microcolumn and investigated the dependence of the pattern thickness on the energies and dose concentration of the electron beam. We have also demonstrated the potential of low-energy lithography by achieving 100 nm-$SiO_2$ thin film patterning.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.5
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• pp.87-92
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• 1985

A simple method to derive EID function which is necessary to compensate for the pro-ximity effect in electron-beam lithography is presented. Using optimization techniques, parameters of EID function is derived and well agreed with experimental valuta.