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http://dx.doi.org/10.4283/JKMS.2007.17.4.178

Study of SiO2 Thin Film Patterning by Low Energy Electron Beam Lithography Using Microcolumns  

Yoshimoto, T. (Department of Physics and Advanced material Science/Center for Next-generation Semiconductor Technology, Sun Moon University)
Kim, H.S. (Department of Physics and Advanced material Science/Center for Next-generation Semiconductor Technology, Sun Moon University)
Kim, D.W. (Department of Physics and Advanced material Science/Center for Next-generation Semiconductor Technology, Sun Moon University)
Ahn, S. (Department of Physics and Advanced material Science/Center for Next-generation Semiconductor Technology, Sun Moon University)
Abstract
Electron beam lithography has been studied as a next-generation lithography technology instead of photo lithography for ULSI semiconductor devices. In this work, we have made a low-energy electron beam lithography system based on the microcolumn and investigated the dependence of the pattern thickness on the energies and dose concentration of the electron beam. We have also demonstrated the potential of low-energy lithography by achieving 100 nm-$SiO_2$ thin film patterning.
Keywords
$SiO_2$ thin film patterning; low-energy lithography; microcolumn; PMMA resist;
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