[KSCI] Korea Science Citation Index Service

A Monte Carlo Simulation Model Development for Electron Beam Lithography Process in the Multi-Layer Resists and Compound Semiconductor Substrates

손명식 (동국대학교 밀리미터파 신기술 연구센터)

Publication Information

Journal of the Korean Vacuum Society / v.12, no.3, 2003 , pp. 182-192 More about this Journal

Abstract

A new Monte Carlo (MC) simulator for electron beam lithography process in the multi-layer resists and compound semiconductor substrates has been developed in order to fabricate and develop the high-speed PHEMT devices for millimeter-wave frequencies. For the accurate and efficient calculation of the transferred and deposited energy distribution to the multi-component and multi-layer targets by electron beams, we newly modeled for the multi-layer resists and heterogeneous multi-layer substrates. By this model, the T-shaped gate fabrication process by electron beam lithography in the PHEMT device has been simulated and analyzed. The simulation results are shown along with the SEM observations in the T-gate formation process, which verifies the new model in this paper.

Keywords

PHEMT; Electron Beam Lithography; Monte Carlo Simulation; PHEMT; Millimeter-wave frequencies; T-shaped Gate;

Citations & Related Records

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