• Title/Summary/Keyword: Electrical circuit

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A Study on the Distance Between the Track Circuits Using Identical Frequency in Railway Track Circuit System (철도궤도회로시스템에서 동일한 주파수를 사용하는 궤도회로 사이의 이격거리에 대한 연구)

  • Kim, Min-Seok;Lee, Jong-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.11
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    • pp.2168-2174
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    • 2009
  • Electrical railway system consists of rolling stock, track, signal and streetcar line system. Track circuit system is a vital system due to checking the location of trains. Track circuits are divided by using frequency and isolated electrically. Currently, there is not a regulation for the distance between track circuits using identical frequency. In case of installing additional track circuits in large stations or marshalling yard, the problem which is that the signal is not exactly transmitted to the track circuit occurs due to the mutual interference. In other words, the track circuit properly is not operated on account of wrong induction current by the mutual inductance between track circuits. In this paper, we suggest the electrical model between track circuits and numerically calculate demanded parameters in electrical model. The distance between track circuits satisfying the mutual inductance which does not happen to the mutual interference phenomenon is presented about the distance of track circuit. It is proved by using Matlab and PSpice program as the amplitude of mutual induced current.

CMOS Analog Integrate-and-fire Neuron Circuit for Driving Memristor based on RRAM

  • Kwon, Min-Woo;Baek, Myung-Hyun;Park, Jungjin;Kim, Hyungjin;Hwang, Sungmin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.174-179
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    • 2017
  • We designed the CMOS analog integrate and fire (I&F) neuron circuit for driving memristor based on resistive-switching random access memory (RRAM). And we fabricated the RRAM device that have $HfO_2$ switching layer using atomic layer deposition (ALD). The RRAM device has gradual set and reset characteristics. By spice modeling of the synaptic device, we performed circuit simulation of synaptic device and CMOS neuron circuit. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, two inverters for pulse generation, a refractory part, and finally a feedback part for learning of the RRAM. We emulated the spike-timing-dependent-plasticity (STDP) characteristic that is performed automatically by pre-synaptic pulse and feedback signal of the neuron circuit. By STDP characteristics, the synaptic weight, conductance of the RRAM, is changed without additional control circuit.

A Safety Improvement of Low Voltage Circuit-breakers through Analysis of Instantaneous Trip Characteristics of 30AF Circuit-Breakers (30AF 차단기 순시 Trip 동작 특성분석을 통한 저압차단기의 안전성 개선방안)

  • Kim, Ju-Chul;Lim, Jeong-Kyun;Lee, Sang-Joong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.12
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    • pp.78-83
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    • 2010
  • The domestic 30AFs that are currently being produced show many problems due to different instantaneous trip characteristics in case of short-circuit. The troubles may cause explosion by excessive short-circuit capacities and arc emission, which results in a wide range of blackout. The function and safety of the low voltage circuit breakers installed before the end load are very important. This paper presents an idea on the safety improvement of the low voltage circuit-breakers through the analysis of instantaneous trip characteristics of domestic 30AF circuit-breakers.

Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing-Dependent Plasticity

  • Kwon, Min-Woo;Kim, Hyungjin;Park, Jungjin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.6
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    • pp.658-663
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    • 2015
  • In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrate-and-Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.

An Improved Topology of DC Circuit Breaker Based on Inverse Current Injection Method (역전류 주입방식기반의 DC차단기의 개선된 토폴로지)

  • Cho, Young-Bae;Son, Ho-Ik;Kim, Hak-Man;Kwak, Joosik;An, Yong-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.11
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    • pp.1491-1496
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    • 2014
  • VSC-HVDC system is vulnerable to a DC fault because the fault current can be injected from AC system to DC system during the fault. Therefore, DC circuit breaker is required to isolate faults in VSC-HVDC system. The inverse current injection method of circuit breaker has been considered as DC circuit breaker. However, the topology has drawback that the breaking time is longer than hybrid circuit breaker using semiconductor devices. In order to solve this problem, this paper proposes an improved topology of circuit breaker based on inverse current injection method. In addition, the proposed topology will be compared with the existing topology. And we will verify its effects by using the simulation results.

A Simple-Structured DC Solid-State Circuit Breaker with Easy Charging Capability (충전 동작이 용이한 간단한 구조의 DC 반도체 차단기)

  • Kim, Jin-Young;Kim, In-Dong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.11
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    • pp.1575-1583
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    • 2017
  • With the development of DC distribution, DC circuit breaker is required to ensure the stability of the DC grid. Unlike a mechanical circuit breaker that blocks after several tens of milliseconds, a DC SSCB(Solid-State Circuit Breaker) can break the fault well within 1 [ms], so it can prevent the damage of accident. However, the previous DC SSCB requires a lot of switching elements for charging commutation capacitors, and the control is complicated. Therefore, this paper proposes a new DC SSCB suitable for DC grid. The proposed DC SSCB is simple to control for charging commutation capacitors, and it can perform the rapid breaking and operating duty of reclosing and rebreaking. The proposed DC SSCB was designed to 380 [V] and 5 [kW] class which is suitable for residential DC distribution, and the operating characteristics of the proposed DC SSCB were verified by simulations and experiments. It is anticipated that the proposed DC SSCB may be utilized to design and realize DC grid system.

A Stuty of Protection Circuit for Discharge Lamp Ballast (방전등 안정기의 보호회로 기술 현황)

  • Han, Soo-Bin;Park, Suck-In;Song, Eu-Gine;Jeoung, Hak-Guen;Jung, Bong-Man
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2008.05a
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    • pp.133-135
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    • 2008
  • In a design of ballast for discharge lamp, various kind of protection circuit are essential for safe operation. In this paper, overvoltage and current detection, no-load detection, lamp-fault detection, end of lamp detection for protection are introduced. Individual circuit operation and their function are described with the base that all circuit form is similar with overvoltage protection circuit.

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Novel High Power Factor Correction Circuit for Low-Cost Electronic Ballasts (저가격 형광등용 전자식 안정기에 적합한 새로운 역률개선회로)

  • Chae, Gyun;Youn, Yong-Sik;Cho, Gyu-Hyeong
    • Proceedings of the KIEE Conference
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    • 1997.07f
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    • pp.2072-2074
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    • 1997
  • A new low-cost high power factor correction circuit for electronic ballasts is proposed. The proposed circuit provides good power factor correction, low current harmonic distortion and cost-effectiveness. The prototype meets the IEC555-2 requirements satisfactorily with nearly unity power factor.

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Design Considerations and Criteria of GTO Snubber Circuit (GTO 스너버 회로 설계에 관한 연구)

  • Seo, Jae-Hyeong;Suh, Bum-Seok;Hyun, Dong-Seok
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.376-378
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    • 1994
  • The turn-off behavior of the GTO Thyristor by its nature differs very much from that of other power f semiconductor switching devices. So canful attention should be paid in designing the GTO snubber circuit. This paper presents the effect of turn-off snubber circuit elements on the switching characteristics of the GTO, and describes considerations and criteria for the selection of the snubber component values.

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Novel energy recovery circuit using an address voltage source

  • Yi, Kang-Hyun;Moon, Gun-Woo
    • Proceedings of the KIPE Conference
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    • 2008.06a
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    • pp.416-418
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    • 2008
  • Cost effective and high efficiency energy recovery circuit (ERC) using an address voltage source is proposed. Different from prior ERC, the proposed circuit uses a voltage source to charge a panel and a current source to discharge the panel. As a result, it can be achieved zero voltage switching (ZVS) of switches in H-bridge inverter and zero current switching (ZCS) of switches of the ERC. Moreover, the proposed ERC can obtain high efficiency, high performance and the decrease of the cost and the size.

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