• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• 한국표면공학회지
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• 제38권5호
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• pp.188-192
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• 2005

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.

• 대한금속재료학회지
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• 제48권6호
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• pp.565-569
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• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• Elastomers and Composites
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• 제38권3호
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• pp.235-242
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• 2003

이소프렌 고무(IR)로 개질된 천연고무계의 NR/CB 복합재료의 가교반응에 대하여 반응 도중의 전기적 성질 변화를 in-situ로 측정함으로서 주어진 샘플의 가교반응 특성을 연구하였다. 샘플의 전기적 성질이 가황반응이 진행되는 동안 샘플 내의 카본 블랙의 재정렬에 의해 연속적으로 변하기 때문에 샘플의 체적고유저항 값(${\rho}$)의 변화를 반응시간의 함수로 표시하였다. 이로부터, 반응온도에 따른 반응시작 안정화시간($t_i$), 최대반응속도 시간($t_p$), 및 이 때의 최대반응속도 체적고유저항값(${\rho}_p$)을 정의하여 이로부터 Arrhenius 도시를 이용한 해석을 시도하였다. 체적 고유저항값 ${\rho}$는 반응시작 전에는 ${\sim}10^8$ order의 높은 값을 보이다가 반응시작 후에 급격히 떨어지는 안정화 시간, $t_i$를 거친 후에 다시 최대반응속도를 보이는 $t_p$에서 피크를 보이며, 그 이후에는 단조 감소하여 일정한 값으로 수렴하는 것이 관찰되었다. 한편, 샘플의 반응온도가 높아질수록 $t_i$는 $1{\sim}2$분으로서 상대적으로 일정한 데 반하여, $t_p$는 점점 더 짧아져 $160^{\circ}C$의 반응온도에서는 3분 정도로까지 짧아지는 것이 관찰되었다. 또한 반응의 인가 주파수에 대한 변화로서, 약 1,000Hz이하의 저주파수에서는 상대적으로 낮은 활성화에너지($E_a$)값을 보였으나, 10,000Hz의 높은 측정주파수에서는 더 큰 $E_a$값을 나타냄으로서 반응온도변화에 민감함을 보여주었다.

• 한국재료학회지
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• 제16권5호
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• pp.312-317
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• 2006

Binary skutterudite $CoSb_3$ compounds were prepared by the encapsulated induction melting (EIM) process, and their thermoelectric, microstructural and mechanical properties were examined. Single-phase ${\delta}-CoSb_3$ was successfully produced by the EIM and subsequent heat treatment at 773 K-873 K for 24 hours in vacuum. Seebeck coefficient increased with increasing heat treatment temperature up to 673 K, showing the positive signs in the range of measuring temperature. However, the samples heat-treated at 773 K-873 K showed negative Seebeck coefficient from room temperature to 400 K, while it showed positive signs above 400 K. Electrical resistivity decreased with increasing temperature, showing typical semiconducting conductivity. Thermal conductivity decreased drastically with increasing heat-treatment temperature. This is closely related with the phase transition to ${\delta}-CoSb_3$.

• 자원환경지질
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• 제30권4호
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• pp.371-377
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• 1997

This paper presents the geophysical applications to the environmenml problem in an abandoned mine area. We would like to focus our attention on the mapping of the soil contamination and the detection of the buried mine tailings. For mapping the soil contamination. measurements of both in-situ magnetic susceptibility (k) and terrain conductivity were carried out. In-situ magnetic susceptibilities of the contaminated soil due to the acid mine drainage show higher values than those of the uncontaminated area. However. those data do not show the correlation with the degree of the soil contamination observed on the surface. The least-squares fitted formula obtained with the measured insitu magnetic susceptibilities is $k=4.8207{\times}W^{0.6332}$, where W is the $Fe^{+2}$ weight percentage. This weight gives most effect to magnetic susceptibility of the soil. Lateral variations of the soil contamination in the shallow subsurface can be detected by the electrical conductivity distributions from EM induction survey. TDIP (Time Domain Induced Polarization) and EM induction surveys were conducted to detect the buried mine tailings. From the results of TDIP, the spatial zone, which shows high chargeability-low resistivity, is interpreted as the buried mine tailings. Therefore, it is concluded that it is possible to discriminate the spatial zone from the uncontaminated ground.

• 대한전기학회논문지
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• 제43권2호
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• pp.296-302
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• 1994

Polycrystalline CuInSeS12T thin were prepared by depositing Cu/In layer, which was sequentially sputtered varying the Cu/(Cu+In) mole ratio, on glass substrate and selenizing with selenium metal vapor in a nitrogen atmosphere. Compositional and structural, characterization was carried out by X-ray diffraction (XRD), wavelength-dispersive spectroscopy(WDS), and scanning electron microscope(SEM). Electrical characterization was carried out by the measurements of Hall effect, electrical resistivity. Large indium loss occurs in early stage of the selenization process. The selenized films which had mole ratios larger than 0.28 have chalcopyrite CuInSeS12T phase and these that had less mole ratios have sphalerite phase. The selenized films containing CuS1xTSe phase have Cu-rich CuInSeS12T phase and these that did not contain CuS1xTSe have In-rich CuInSeS12T phase. By optimizing the sputtering conditions,it is possible to fabricate CuInSeS12T thin films which have little secondary phases and an appropriate hole concentration (10S015T ~ 10S016TcmS0-3T) for solar cells.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.303-310
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• 2010

We fabricated $La_{0.6}Sr_{0.4}MnO_3$ thin films using radio frequency (RF) magnetron sputtering. They were grown on sapphire substrates with various deposition conditions. After the growth of the $La_{0.6}Sr_{0.4}MnO_3$ thin films, they were annealed at various temperatures to be crystallized. We successfully fabricated single phase $La_{0.6}Sr_{0.4}MnO_3$ thin films with high electrical conductivity. The room temperature resistivity was $1.5{\times}10^{-2}{\Omega}{\cdot}cm$. It can be considered that $La_{0.6}Sr_{0.4}MnO_3$ thin films are one of the feasible candidates for electrodes for integrated device applications.

• 한국표면공학회지
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• 제45권1호
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• pp.1-7
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• 2012

Multi-walled carbon nanotube (MWCNT) aluminum composite powders were deposited to form coatings using a high velocity oxygen fuel (HVOF) spraying process. High thermal energy and contact with atmospheric oxygen were supplied as the MWCNT aluminum composite particles were exposed to a gas flow field at high temperature (${\sim}3.0{\times}10^3$ K) during HVOF spraying. As a result, the particles underwent full or partial melting and rapid solidification due to the high thermal energy, and the exposure to oxygen induced the interfacial reaction of MWCNTs within the particle. The electrical and mechanical properties of MWCNT aluminum composite coatings were evaluated based on microstructure analysis. Electrical resistivity, elastic modulus, and micro-hardness, of the MWCNT aluminum composite coatings were higher than those of pure aluminum coating. The contribution of MWCNTs to the aluminum matrix can be attributed to their high electrical conductivity, dispersion hardening and anchoring effects. The relationship among the properties and the interaction of the MWCNTs with the aluminum matrix is discussed.

• Transactions on Electrical and Electronic Materials
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• 제13권3호
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• pp.111-115
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• 2012

Spray pyrolysis method was applied for the preparation of indium oxide ($In_2O_3$) thin films, by varying the substrate temperature range from 400-$600^{\circ}C$. All the samples were characterized at room temperature by using X-Ray diffraction, Scanning electron microscopy, Atomic Force Microscopy, Hall Effect and UV-Visible spectrophotometry. The optimal substrate temperature required for obtaining films of high crystallographic quality was $575^{\circ}C$. By comparing optical transmittance and electrical conductivity it was observed that the best figure of merit for these films was achieved for the same temperature and electrical resistivity was in the order of ${\rho}=1.47{\times}10^{-1}[{\Omega}cm]$. Gas sensing measurements of the films in ethanol showed enhancement with surface roughness and sheet resistance.