Journal of Surface Science and Engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
권호 표지

Preparation and Characterization of IZO Thin Films grown by DC Magnetron Sputtering

DC 마그네트론 스퍼터링을 이용한 IZO 박막의 제조와 특성 연구

  • Park Chang-Ha (Korea Institute of Machinery and Materials, Surface Technology Research Center) ;
  • Lee Hak-Jun (Korea Institute of Machinery and Materials, Surface Technology Research Center) ;
  • Kim Hyeon-Boum (Korea Institute of Machinery and Materials, Surface Technology Research Center) ;
  • Kim Dong-Ho (Korea Institute of Machinery and Materials, Surface Technology Research Center) ;
  • Lee Gun-Hwan (Korea Institute of Machinery and Materials, Surface Technology Research Center)
  • 박창하 (한국기계연구원 재료기술연구소 표면기술연구센터) ;
  • 이학준 (한국기계연구원 재료기술연구소 표면기술연구센터) ;
  • 김현범 (한국기계연구원 재료기술연구소 표면기술연구센터) ;
  • 김동호 (한국기계연구원 재료기술연구소 표면기술연구센터) ;
  • 이건환 (한국기계연구원 재료기술연구소 표면기술연구센터)
  • Published : 2005.10.01
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Abstract

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.

Keywords

References

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