• Title/Summary/Keyword: Electric/Electronic Circuits

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Steady-State Performance Analysis of an Integrated Wind Turbine Generating System in a DC Transmission System with Power Compensation System

  • Yamashita, Ken-Ichiro;Nishikata, Shoji
    • Journal of international Conference on Electrical Machines and Systems
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    • v.1 no.1
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    • pp.121-127
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    • 2012
  • An electric power compensation system for a DC transmission system with an integrated wind turbine generator is proposed. The proposed compensation system consists of a synchronous generator and a duplex reactor. This apparatus is connected to the sending-end circuit of the DC transmission system. A set of steady-state equations of the system is first derived. Then, the effect of the duplex reactor, which can eliminate the sending-end grid current distortion due to commutation of the converter, is explored. The relationships among power at the sending-end circuit are also revealed. It is shown that fluctuations in the sending-end grid power due to changes in wind velocities are compensated with the proposed system. Finally, the effects of the sending-end grid conditions on the steady-state characteristics of the system are studied.

Sensorless Control of SRM using Inductance Estimation Thechnique (인덕턴스 추론기법에 의한 SRM의 센서리스 제어)

  • Moon, J.W.;Park, S.J.;Ahn, J.W.;Kim, C.U.;Hwang, Y.M.
    • Proceedings of the KIEE Conference
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    • 2001.10a
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    • pp.137-139
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    • 2001
  • This paper describes a new methods of detecting rotor position in SRM(switched reluctance motor). The Conventional method of position sensorless control for SRM is measuring phase current and pulse voltage applied in unexcited phase. The estimation of rotor position based on the detection of inductance by pulse current. Implementation is via low-cost electronic circuits with DSP320F241. Test results show that this technique is a possible approach to detect the rotor position of an SRM.

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Bender-type Multilayer Piezoelectric Devices for Energy Harvesting (미소에너지 하베스팅용 적층 벤더 압전 소자 성능 연구)

  • Jeong, Soon-Jong;Kim, Min-Soo;Kim, In-Sung;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.193-193
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    • 2008
  • Wearable and ubiquitous micro systems will be greatly growing and their related devices should be self-powered in order to avoid the replacement of finite power sources, for example, by scavenging energy from the environment. With ever reducing power requirements of both analog and digital circuits, power scavenging approaches are becoming increasingly realistic. One approach is to drive an electromechanical converter from ambient motion or vibration. Vibration-driven generators based on electromagnetic, electrostatic and piezoelectric technologies have been demonstrated. Among various generator types proposed so far, piezoelectric generator possesses considerable potential in micro system. To overcome low mechanical-to-electric energy conversion, the piezoelectric device should activate in resonance mode in response to external vibration. Normally, the external vibration excretes at low frequency ranging 0.1 to 200 Hz, whereas the resonant frequencies of the devices are fixed as constant. Therefore, keeping their resonant mode in varying external vibration can be one of important points in enhancing the conversion efficiency. We investigated the possibility of use of multi-bender type piezoelectric devices. To match the external vibration frequency with the device resonant frequency, the various devices with different resonant frequency were chosen.

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Prediction of Change in Equivalent Circuit Parameters of Transformer Winding Due to Axial Deformation using Sweep Frequency Response Analysis

  • Sathya, M. Arul;Usa, S.
    • Journal of Electrical Engineering and Technology
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    • v.10 no.3
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    • pp.983-989
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    • 2015
  • Power transformer is one of the major and key apparatus in electric power system. Monitoring and diagnosis of transformer fault is necessary for improving the life period of transformer. The failures caused by short circuits are one of the causes of transformer outages. The short circuit currents induce excessive forces in the transformer windings which result in winding deformation affecting the mechanical and electrical characteristics of the winding. In the present work, a transformer producing only the radial flux under short circuit is considered. The corresponding axial displacement profile of the windings is computed using Finite Element Method based transient structural analysis and thus obtained displacements are compared with the experimental result. The change in inter disc capacitance and mutual inductance of the deformed windings due to different short circuit currents are computed using Finite Element Method based field analyses and the corresponding Sweep Frequency Responses are computed using the modified electrical equivalent circuit. From the change in the first resonant frequency, the winding movement can be quantified which will be useful for estimating the mechanical withstand capability of the winding for different short circuit currents in the design stage itself.

Impacts of Process and Design Parameters on the Electrical Characteristics of High-Voltage DMOSFETs (공정 및 설계 변수가 고전압 LDMOSFET의 전기적 특성에 미치는 영향)

  • 박훈수;이영기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.9
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    • pp.911-915
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    • 2004
  • In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.

An Electrical Repair Circuit for Yield Increment of High Density Memory (고집적 메모리의 yield 개선을 위한 전기적 구제회로)

  • 김필중;김종빈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.4
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    • pp.273-279
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    • 2000
  • Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

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Comparison of Fault Current Limiting Characteristics According to Facility in Power System (전력계통의 사고전류 저감 설비별 특성 비교)

  • Park, Hyoung-Min;Choi, Hyo-Sang;Cho, Yong-Sun;Lim, Sung-Hun;Hwang, Jong-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.127-129
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    • 2005
  • We investigated the fault current limiting characteristics according to the various facilities in power system. Power systems are becoming larger and larger for meeting electric power demand. Therefore, the over-currents resulting from contingencies such as short circuits are increasing higher, which causes the ratings of circuit breakers(CBs) to increase. Upgrading or replacement of CBs is not difficult from the technical and economical point of view. Bus split is being adopted into a part of 154 kV power systems, but it has adverse effects such as overload to neighboring power systems, increased voltage fluctuation, and decreased power system stability. For 345 kV power systems, the bus split measure is not feasible and dc reactors are being suggested. The superconducting fault current limiter is a protection gear of new concept that limits fault current automatically in a few milliseconds. It can also provide the effect of CB capacity increase, relaxation of power machine criteria, enhancement in power system reliability, and flexible power system operation.

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Design of Low-Melting Metal Fuse Elements of Current Sensing Type Protection Device for Large Capacity Secondary Battery Protection System (대용량 이차전지 보호 시스템용 전류 감지 동작형 보호소자의 저융점 금속 가용체 설계)

  • Kim, Eun Min;Kang, Chang yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.6
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    • pp.427-432
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    • 2018
  • High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective, a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.

Double Two Switch Forward Transformer-Linked Soft-Switching PWM DC-DC Power Converter with Tapped Inductor Filters

  • Moisseev Serguei;Koudriavtsev Oleg;Hiraki Eiji;Nakamura Mantaro;Nakaoka Mutsuo;Hamada Satoshi
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.193-197
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    • 2001
  • This paper presents a novel circuit topology of the double two-switch forward type high frequency transformer linked soft-switching PWM DC-DC power converter with tapped inductor filters that can operate under a condition of the low peak voltage stress across the power semiconductor devices and lowered peak current stress through the transformer for some high power applications. This circuit topology of an interleaved two-switch forward soft-switching power converter is proposed in the order to minimize an idle circulating current due to the tapped inductor filter without of any additional active auxiliary resonant-assisted snubber circuits, such as active resonant DC link snubbers and AC link snubbers, active resonant commutation leg link snubbers. The unique advantages of this power converter are less power circuit components and power semiconductor devices, constant frequency PWM scheme, cost effective configuration and wider soft-switching PWM operation range under PWM power regulations load variations. The practical effectiveness of the proposed soft-switching converter circuit topology is tested by simulations and is proved by experimental results received from the 500W-100kHz breadboard setup.

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Main Factors that Effect on the Ion-Migration of PCB (PCB의 이온-마이그레이션에 영향을 미치는 주요요인)

  • Jang, In-Hyeok;Kim, Jeong-Ho;Oh, Gil-Gu;Lee, Young-Joo;Lim, Hong-Woo;Choi, Youn-Ok
    • Journal of Applied Reliability
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    • v.16 no.3
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    • pp.202-207
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    • 2016
  • Purpose: The purpose of this study is main factors (environmental conditions, pattern spacing, pattern material) that effect the ion-migration of PCB. Methods: Recently, the electronic components are becoming more high density of electronic device, so that electronic circuits have smaller pitches between the patten and more vulnerable to insulation failure. so the reliability of electric insulation of device has become an ever important issue as device contact pitches of pattern. Usually, ion-migration occurs in high temperature and high humidity environment as voltage is applied to the circuit. Under high temperature and high humidity, voltage applied electronic components respond to applied voltages by metals's electrochemical ionization and a conducting filament forms between the anode and cathode across a nonmetallic medium. This leads to short-circuit failure of the electronic component. Results: we studied ion-migration that occurs in accordance with the main factors (environmental conditions, pitches, pattern material). The PCB pattern material was made by two different types of material (free solder, OSP) for this research and pitches of pattern is 0.15mm, 0.3mm, 0.5mm. PCB was experimented in the environmental conditions (high temperature $120^{\circ}C$, high temperature and high humidity $85^{\circ}C$, 85%RH) and was analyzed for ion-migration through the experiment results. Conclusion: We confirmed that environmental condition, pitches of pattern, pattern material had effect on ion-migration of PCB.