1 |
A novel high-frequency LDMOS transistor using an extended gate RESURF technology
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[
L. Vestling;B. Edhholm;J. Olsson;S. Tiensuu;A. Soderbrag
] /
Proceeding of ISPSD '97
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2 |
Integration of power LDMOS into a low-voltage 0.5㎛ BiCMOS technology
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[
P. G. Tsui;P. V. Gilbert;S. W. Sun
] /
IEEE IEDM Digest
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3 |
스마트 파워 IC 를 위한 P+ Driver 구조의 횡형 트렌치 IGBT
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[
문승현;강이구;성만영;김상식
] /
전기전자재료학회논문지
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4 |
레치업 특성의 개선과 고속 스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT
/
[
강이구;성만영
] /
전기전자재료학회논문지
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5 |
Heat generation in semi conductor devices
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[
U. Lindefelt
] /
Journal of Applied Physics
DOI
ScienceOn
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6 |
Effects of drain structures on the hot-carrier degradation of high-voltage LDMOS transistors
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[
D. W. Lee;T. M. Ro;J. Kim;J. G. Koo;K. S. Nam;H. S. Park
] /
Journal of the Korean Physical Society
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7 |
An ultra-low on -resistance power MOSFET fabricated by using a fully self-aligned process
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[
D. Ueda;H. Takagi;G. Kano
] /
IEEE Transaction on Electron Devices
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