• Journal of Astronomy and Space Sciences
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• 제33권3호
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• pp.207-210
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• 2016

Under the assumption of the presence of a medium-scale E × B drift vortex of plasma in the daytime midlatitude F region, and using a simplified ionospheric model, we demonstrate that the E × B drift produces noticeable perturbations in the horizontal distribution of the plasma density in the upper F region. The pattern of ion density perturbations shows two separate medium scale domains of enhanced and reduced ion density with respect to the background. The E × B drift does not produce multiple small-scale ion density irregularities through plasma mixing because of the suppression effect of the field-aligned ambipolar plasma diffusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.201-202
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• 2005

The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times10^{13}/cm^2$ to $1.0\times10^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times, however, the on-resistance was also increased about 76%. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.

• 한국농업기계학회:학술대회논문집
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• 한국농업기계학회 2000년도 THE THIRD INTERNATIONAL CONFERENCE ON AGRICULTURAL MACHINERY ENGINEERING. V.III
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• pp.749-756
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• 2000

Chemical application, one of the most important crop management processes happened to cause spray drift, that would threaten farmers in field as well as dwellers in rural region. Spray drift was affected by micro-meteorological parameters. In Korea, a boom sprayer was introduced but good effects of a boom sprayer was not evaluated. A study to evaluate short distance drift characteristics of a boom sprayer in paddy fields has been undergoing and determining wind characteristics in paddy field was the main purpose of this paper. Micro-meteorological information has been pre-requisite information for evaluating drift in both long and short distances or in both theoretical and experimental ways. Wind velocity, Reynolds stresses, turbulence intensity, skewness, kurtosis etc. were evaluated with height from the ground using a 2-dimensional probe and a hot wire anemometer system.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.287-294
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• 2011

In this paper, two competing mechanisms determining drain current of tunneling field-effect transistors (TFETs) have been investigated such as band-to-band tunneling and drift. Based on the results, the characteristics of TFETs have been discussed in the tunneling-dominant and drift-dominant region.

• 한국컴퓨터정보학회논문지
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• 제19권8호
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• pp.107-117
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• 2014

본 논문에서는 심전도 파형에서 P, R, T-wave와 같은 local maxima 신호 영역과 Q, S-wave와 같은 local minima 신호영역을 제거하여 기저선 변동 잡음을 제거하기 위한 방법을 제시한다. 이를 위해 형태연산을 개선한 morphology-pair 연산을 심전도 파형에 적용하고, 그 결과 발생되는 돌출 파형을 제거하고자 중간 값 연산을 적용하였다. 제안한 알고리즘의 성능을 확인하기 위해 실제 심전도 임상 데이터인 MIT/BIH 데이터베이스를 이용하였으며, 실험 결과 원 신호를 왜곡 하지 않고, 기저선 변동 잡음을 효과적으로 제거함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.199-204
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• 2016

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.911-915
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• 2004

In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.844-847
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• 2001

In this work, transient characteristics of the Non-Punch Through(NPT) Insulated Gate Bipolar Transistor(IGBT) has been studied. we has analyzed with lifetimes excess minority carrier injected into N-dirft, base region of IGBT's BJT part and accumulated charge of on-state which affected swiching characteristic. In this paper, excess minority carrier and charge distribution in active base region is expressed analytically. This analysis proposed optical trade-off between lifetimes and accumulated charge for decreasing switching losses because charge result in switching loss when device was tuned off.

• 한국항만학회지
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• 제9권1호
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• pp.57-63
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• 1995

In this paper we examine the mass transport within the boundary layer near the sea bottom. The fluid domain is seperated into inner and outer region of boundary layers. In outer region, the wave field is assumed to be inviscid and irrotational. When the incident waves enter the arrays of circular cylinders, the scattering of water waves by an array of N bottom mounted vertical circular cylinders is solved using the method proposed by Linton & Evans under the potential theory. In inner region, the Navier-Stokes equation must be satisfied with boundary conditions at the boundary later and bottom is to be represented by the sum of the Eulerian mean drift and the Stokes' drift.