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http://dx.doi.org/10.5573/JSTS.2011.11.4.287

Dependency of Tunneling Field-Effect Transistor(TFET) Characteristics on Operation Regions  

Lee, Min-Jin (Department of Electronic Engineering, R821A, Sogang University)
Choi, Woo-Young (Department of Electronic Engineering, R821A, Sogang University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.11, no.4, 2011 , pp. 287-294 More about this Journal
Abstract
In this paper, two competing mechanisms determining drain current of tunneling field-effect transistors (TFETs) have been investigated such as band-to-band tunneling and drift. Based on the results, the characteristics of TFETs have been discussed in the tunneling-dominant and drift-dominant region.
Keywords
Tunneling field-effect transistor; band-to-band tunneling; drift; tunnel resistance; channel resistance;
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