1 |
E. G. Kang and M. Y. Sung, 'A small sized lateral trench electrode IGBT for improving latch-up and breakdown characteristics', Solid-State Electronics, Vol. 46, No.2, p. 295, 2002
|
2 |
E. G. Kang, S. S. Kim, and M. Y. Sung, 'The electrical characteristics of the fabricated lateral trench electrode IGBT for intelligent power K.', International Journal for Manufacturing Science and Production, Vol. 4, No.4, p. 189, 2002
|
3 |
M. Y. Sung, E. G. Kang, D. J. Kim, and S. S. Kim, 'A new lateral trench electrode insulated gate bipolar transistor with p+ diverter for superior electrical characteristics', Japanese Journal of Applied Physics, Vol. 42, No. 4B, p. 2119, 2003
DOI
|
4 |
J.-S. Lee, E.-G. Kang, and M.-Y. Sung, 'Improvement of electrical characteristics of vertical NPT trench gate IGBT using trench emitter electrode', J. of KIEEME(in Korean), Vol. 19, No. 10, p. 912, 2006
과학기술학회마을
DOI
ScienceOn
|
5 |
M. Nemoto and B. J. Baliga, 'The recessed-gate IGBT structure', proc. of the ISPSD '99, p. 149, 1999
|
6 |
P. M. Campbell, W. Garwacki, A. R. Sears, P. Mmenditto, and B. J. Baliga, 'Trapezoidalgroove schottky-gate vertical-channel GaAs FET (GaAs static induction transistor)', Electron Device Letters, Vol. 6, No.6, p. 304, 1985
DOI
ScienceOn
|
7 |
D. W. Kim, M. Y. Sung, and E. G. Kang, 'A dual trench gate emitter switched thyristor (DTG-EST) with dual trench gate electrode and different gate oxide thickness', Microelectronic Engineering, Vol. 70, No.1, p. 50, 2003
DOI
ScienceOn
|
8 |
B. Jayant Baliga, Michael S. Adler, Robert F. Love, Peter V. Gray, and Nathan D. Zomrner, 'The insulated gate transistor: a new threeterminal MOS-controlled bipolar power device', Trans. on Electron Devices, Vol. 31, No. 6, p. 821, 1984
|