• 전기전자학회논문지
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• 제25권2호
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• pp.280-284
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• 2021

본 논문에서는 스냅백 특성을 개선시키기 위해 일반적인 SCR의 구조적 변경 및 Stack 기술을 적용한 새로운 구조의 ESD 보호회로를 제안한다. 펜타-웰과 더블 트리거를 이용한 구조에 대한 전기적 특성을 분석하고 Stack 구조를 적용해 트리거 전압과 홀딩 전압을 개선하였다. 시뮬레이션을 통한 전자 전류와 총 전류 흐름을 분석 하였다. 이를 통해 레치-업 면역 특성과 우수한 홀딩전압 특성을 확인 하였다. 제안된 ESD 보호회로의 전기적 특성은 TCAD 시뮬레이터를 통해 구조를 형성하고 HBM 모델링을 통해 분석 하였다.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.44-49
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• 2022

In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge₂Sb₂Te₅/Ti/W-doped Ge₈Sb₂Te₁₁, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge₂Sb₂Te₅ and W-doped Ge₈Sb₂Te₁₁ films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge₈Sb₂Te₁₁ film was about 1 order larger than that of Ge₂Sb₂Te₅ film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge₂Sb₂Te₅ (150 nm)/Ti (20 nm)/W-Ge₈Sb₂Te₁₁ (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

• 전력전자학회논문지
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• 제15권2호
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• pp.134-141
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• 2010

소형 PEM (Proton Exchange Membrane) 연료전지 시스템은 가습이 필요치 않아 상용화의 가능성이 크지만 그 제어 방법은 뚜렷하게 정립되어 있지 않다. 따라서 본 논문에서는 소형 PEM 연료전지 시스템의 제어를 위해 이중 루프 구조의 제어방식을 정립하고 DSP (Digital Signal Processor)를 이용하여 구현한다. 일반적으로 연료전지 시스템에서 제어의 핵심 요소는 크게 공기와 수소의 공급, 스택 내부의 수분 관리, 스택의 온도 관리로 나뉜다. 별도의 가습이 없이 공랭식으로 구동되는 소형 PEM 연료전지 스택의 제어에 있어서 팬은 스택의 공기 공급과 열관리 및 수분관리를 위한 핵심적인 역할을 하며, 퍼지밸브는 스택 내부의 잉여수분을 배출한다. 제안된 방식은 이중 제어루프를 이용한 팬의 제어를 통해 팬의 과도응답을 빠르게 하여 공기의 공급 속도를 개선시키며, 연료전지 스택의 전압변화를 피드백 하여 보상해줌으로써 연료전지가 부하변동에 대해 신속한 응답 특성을 갖도록 하였다. 제안된 방법의 유용함은 60W급 소형 PEM 연료전지 시스템의 실험과 이를 이용한 노트북 컴퓨터의 구동을 통해 검증된다.

• Bulletin of the Korean Chemical Society
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• 제24권9호
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• pp.1281-1283
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• 2003

Proteins in highly oriented lipid bilayer samples are useful to study membrane protein structure determination. Planar lipid bilayers aligned and supported on glass slide were prepared. These stack of glass slide with planar lipid bilayers are not well fit for commercial solid-state NMR probe with round coil. Therefore, homebuilt solid-state NMR probe was built and used for a stack of thin glass plates and RF coil is wrapping directly around the flat square sample. The overall filling factor of the coil is much better and the large surface area enhances the extent to orientation by providing uniform environments for the phospholipids and the high ratio of circumference to area reduces edge effects. $^1H\;and\;^{15}N$ double resonance probe for 400 MHz NMR (9.4T) with a flat coil (coil size: 11 mm ${\times}$ 20 mm ${\times}$ 4 mm) is constructed and tested.

• 조명전기설비학회논문지
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• 제22권8호
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• pp.52-58
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• 2008

본 논문에서는 2.4[GHz]/5.8[GHz] 대역의 이중대역 스위치 설계에 대하여 논한다. 이 스위치는 TDD시스템에 적용 가능하며, 광대역 특성을 개선할 수 있는 새로운 구조를 제안하고 시뮬레이션을 통해 최적의 구조로 설계하였다. 2.4[GHz]/5.8[GHz] 이중대역 스위치는 현재 상용화되고 있는 802.11a/b/g 시스템에 응용할 수 있는 광대역, 고출력, 높은 격리도를 갖는 구조를 연구하였다. 스위치의 송신부는 2개의 FET를 스택 구조로 병렬 스위칭 소자로 동작하도록 설계하였다. 수신부는 기본적인 직/병렬 FET에 추가로 직렬 FET를 삽입한 비대칭 구조를 갖도록 수신부를 설계하였다. SPDT(Single Pole Double Throw) Tx/Rx FET 스위치는 하나의 입력에 2개의 출력으로 스위칭할 수 있는 장치이다. 이 제작된 스위치는 삽입손실 특성은 DC$\sim$6[GHz]까지 3[dB]보다 낮으며 수신경로의 격리도는 -30[dB]이하의 특성을 가지고 있다.

• Progress in Superconductivity
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• 제6권1호
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• pp.52-55
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• 2004

The inductive coupling theory in serially stacked $Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ intrinsic Josephson junctions predicts that the lattice structure of the Josephson vortices along the c axis gradually changes from the triangular to the rectangular lattice with increasing the vortex velocity. This lattice transition appears as voltage jumps or sub-branch splitting in the Josephson vortex-flow region of current-voltage characteristics (IVC). We report the IVC in external magnetic fields from 2 to 4 T. The stack, with the lateral size of 1.4${\times}$15 $u\m^2$, was fabricated by using the double-side cleaving technique. The sub-branches in the Josephson vortex-flow region, corresponding to a plasma propagation mode in serially coupled intrinsic Josephson junctions, were also observed in the range of 2∼4T. Switching from one branch to another in Josephson vortex-flow region suggests the structural transition of the moving Josephson vortex lattice.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1281-1283
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• 2007

In this paper, the properties of n-channel poly-Si TFTs with different channel widths are reported. Poly-Si fabricated using ELA on glass substrates has high quality as a material for applications such as TFT-LCDs. The fabricated n-channel TFTs have a double stack structure of oxide-nitride which acts as an insulator layer. The results show that the small channel TFTs exhibited a lower $V_{TH}$ and the wide channel TFTs had a higher $I_{DSAT}$. The nchannel poly-Si TFTs with an $I_{ON}/I_{OFF}$ value of more than $10^4$ can be reliable switching devices for AMOLED displays.

• ETRI Journal
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• 제39권3호
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• pp.390-397
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• 2017

In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 1996년도 춘계 학술대회논문집
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• pp.58-67
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• 1996

This paper describes some computational results of various energy and environmental systems using Patankar's SIMPLE method. The specific topics handled in this study are jet bubbling reactor for flue gas desulfurization, cyclone-type afterburner for incineration, 200m tall stack for 500 MW electric power generation, double skin and heat storage systems of building energy saving for the utilization of solar heating, finally turbulent combustion systems with liquid droplet or pulverized coal particle. A control-volume based finite-difference method with the power-law scheme is employed for discretization. The pressure-velocity coupling is resolved by the use of the revised version of SIMPLE, that is, SIMPLEC. Reynolds stresses are closed using the standard $k-{\varepsilon}$ and RNG $k-{\varepsilon}$ models. Two-phase turbulent combustion of liquid drop or pulverized coal particle is modeled using locally-homogeneous, gas-phase, eddy breakup model. However simple approximate models are incorporated for the modeling of the second phase slip and retardation of ignition without consideration of any detailed particle behavior. Some important results are presented and discussed in a brief note. Especially, in order to make uniform exit flow for the jet bubbling reactor, a well-designed structure of distributor is needed. Further, the aspect ratio in the double skin system appears to be one of important factors to give rise to the visible change of the induced air flow rate. The computational tool employed in this study, in general, appears as a viable method for the design of various engineering system of interest.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.234-234
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• 2010

The PR transitions in asymmetric dot-in-double-quantum-well (DdWELL) photodetector is identified by bias-dependent spectral behaviors. Discrete n-i-n infrared photodetectors were fabricated on a 30-period asymmetric InAs-QD/[InGaAs/GaAs]/AlGaAs DdWELL wafer that was prepared by MBE technique. A 2.0-monolayer (ML) InAs QD ensemble was embedded in upper combined well of InGaAs/GaAs and each stack is separated by a 50-nm AlGaAs barrier. Each pixel has circular aperture of 300 um in diameter, and the mesa cell ($410{\times}410\;{\mu}m^2$) was defined by shallow etching. PR measurements were performed in the spectral range of $3{\sim}13\;{\mu}m$ (~ 100-400 meV) by using a Fourier-transform infrared (FTIR) spectrometer and a low-noise preamplifier. The asymmetric photodetector exhibits unique transition behaviors that near-/far-infrared (NIR/FIR) photoresponse (PR) bands are blue/red shifted by the electric field, contrasted to mid-infrared (MIR) with no dependence. In addition, the MIR-FIR dual-band spectra change into single-band feature by the polarity. A four-level energy band model is proposed for the transition scheme, and the field dependence of FIR bands numerically calculated by a simplified DdWELL structure is in good agreement with that of the PR spectra. The wavelength shift by the field strength and the spectral change by the polarity are discussed on the basis of four-level transition.