한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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The characteristics of poly-silicon TFTs fabricated using ELA for AMOLED applications

  • Son, Hyuk-Joo (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Jae-Hong (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jung, Sung-Wook (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Jeoung-In (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jang, Kyung-Soo (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Chung, Hok-Yoon (SAMSUNG SDI CO., LTD) ;
  • Choi, Byoung-Deog (SAMSUNG SDI CO., LTD) ;
  • Lee, Ki-Yong (SAMSUNG SDI CO., LTD) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University)
  • Published : 2007.08.27
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Abstract

In this paper, the properties of n-channel poly-Si TFTs with different channel widths are reported. Poly-Si fabricated using ELA on glass substrates has high quality as a material for applications such as TFT-LCDs. The fabricated n-channel TFTs have a double stack structure of oxide-nitride which acts as an insulator layer. The results show that the small channel TFTs exhibited a lower $V_{TH}$ and the wide channel TFTs had a higher $I_{DSAT}$. The nchannel poly-Si TFTs with an $I_{ON}/I_{OFF}$ value of more than $10^4$ can be reliable switching devices for AMOLED displays.

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