• The Transactions of the Korean Institute of Electrical Engineers P
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• 제58권2호
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• pp.101-107
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• 2009

This paper deal with development of on-line type voltage sag compensation system using supercapacitor EDLC to solve the voltage sag problems which are considered to be dominant disturbances affecting the power quality. With the wide use of semiconductor devices in electrical equipment, modem-type loads are becoming increasingly sensitive to the voltage sags and the disturbances prove to be costly to industries. Supercapacitor EDLC is employed to compensate dynamically for the voltage sag of system with sensitive loads. This capacitor has higher energy density than the electrolytic capacitor. Also, this capacitor has a lot of advantage such as no maintenance, longer life cycle and faster charge-discharge time than the battery system. Therefore, in this paper, the energy design scheme of supercapacitor and the configuration technique of on-line type voltage sag compensation systems are newly introduced. According to the results of experimental of prototype 5[kVA] system, it is verified that the developed system has effectiveness of voltage sag compensation by using a supercapacitor EDLC.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제66권8호
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• Journal of the Korean Society for Heat Treatment
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• 제33권5호
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• pp.226-231
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• 2020

The Cu-Co-Si alloy shows high strength by forming precipitates by aging precipitation heat treatment of supersaturated solid solution treated with solution treatment such as Cu-Ni-Si alloy, and the Co₂Si precipitated phase is dispersed in the copper matrix. The effect of aging treatment on the microstructure, mechanical and electrical properties of Cu-Co-Si alloys for electronic devices was investigated. As a results of SEM/EDS analysis, it was found that Co₂Si precipitates of 30~300 nm size were distributed in grains. By performing the double aging treatment, it was possible to improve the strength and electrical conductivity by dispersing the fine precipitate evenly.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제32A권9호
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• pp.98-105
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• 1995

Recent microwave IC's reach to the extent of high operating frequencies at which bonding wires limit their performance as dominant parasitic components. Double bonding wires separated by an internal angle have been firstly characterized using the Method of Moments with the incorporation of the ohmic resistance calculated by the phenomenological loss equivalence method. For a 30$^{\circ}$ internal angle, the calculated total reactance is 45% less than that of a single bonding wire due to the negative mutual coupling effect. The radiation effect has been observed decreasing the mutual inductance, whereas for parallel bonding wires it greatly increases the mutual inductance. This calculation results can be widely used for designing and packaging of high frequency and high density MMIC's and OEIC's.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 한국소음진동공학회 2014년도 추계학술대회 논문집
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• pp.79-83
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• 2014

In this paper, SAW devices are fabricated using various IDT shape(Single/Double) to check an effect of the IDT on SAW device. And based on theory of a particle velocity moved by SAW and IDT, a particle velocity is measured and calculated. Depend on insert power, a particle velocity using Single-IDT SAW device is about two times bigger than Double-IDT SAW device and it's almost same with a theoretical different.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.47.2-47.2
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• 2011

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.

• Proceeding of EDISON Challenge
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• 제4회(2015년)
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• pp.343-346
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• 2015

Ultra-thin body transistor is one of the emerging devices since it control leakage current flows through substrate. In addition, it can be operated by double gates, thus, its on/off current ratio is higher than conventional counterpart. In this paper, we design and investigate a CMOS inverter based on ultra-thin body MOSFETs to estimate its performance in real application. NEGF (non-equilibrium Green's function) method is used to obatain relationship between drain current and voltage. DC transfer is extracted from the relationship, and FO4 (fanout-of-4) propagation delay is reported as 5.1 ps estimated by a simple model.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.107-117
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• 2010

An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available $ATLAS^{TM}$ device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.

• Journal of Power Electronics
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• 제15권4호
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• pp.951-963
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• 2015

In this paper, a new symmetric multilevel inverter is proposed. A simple structure for the cascaded multilevel inverter topology is also proposed, which produces a high number of levels with the application of few power electronic devices. The symmetric multilevel inverter can generate 2n+1 levels with a reduced number of power switches. The basic unit is composed of a single and double source unit (SDS-unit). The application of this SDS-unit is for reducing the number of power electronic components like insulated gate bipolar transistors, freewheeling diodes, gate driver circuits, dc voltage sources, and blocked voltages by switches. Various new algorithms are recommended to determine the magnitude of dc sources in a cascaded structure. Furthermore, the proposed topology is optimized for different goals. The proposed cascaded structure is compared with other similar topologies. For verifying the performance of the proposed basic symmetric and cascaded structure, results from a computer-based MATLAB/Simulink simulation and from experimental hardware are also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.422-423
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• 2005

RF Micro switches is a miniature device or an array of integration devices and mechanical components and fabricated with Ie batch-processing techniques. RF Micro switches application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF Micro switches have been developed for the application to the milimeter wave system. RF Micro switches offer a substantilly higher performance than PIN diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool.