Wideband Characterization of Angled Double Bonding Wires for Microwave Devices

초고주파 소자를 위한 사잇각을 갖는 이중 본딩와이어의 광대역 특성 해석

  • Published : 1995.09.01

Abstract

Recent microwave IC's reach to the extent of high operating frequencies at which bonding wires limit their performance as dominant parasitic components. Double bonding wires separated by an internal angle have been firstly characterized using the Method of Moments with the incorporation of the ohmic resistance calculated by the phenomenological loss equivalence method. For a 30$^{\circ}$ internal angle, the calculated total reactance is 45% less than that of a single bonding wire due to the negative mutual coupling effect. The radiation effect has been observed decreasing the mutual inductance, whereas for parallel bonding wires it greatly increases the mutual inductance. This calculation results can be widely used for designing and packaging of high frequency and high density MMIC's and OEIC's.

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