• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.139-143
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• 2005

In this paper, we propose the design on LNA and Down-mixer for MB-OFDM UWB using $0.18\;{\mu}m$ CMOS. LNA, Down-mixer design result shows that it covers the frequency range ken 3 GHz to 5 GHz. The LNA gain is larger than 12.8 dB, and noise figure about 2.6 dB. Double balanced differential down-mixer is designed less than 2 dB gainflatness, and it has over 30 dB LO leakage, feedthrough characteristics.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.894-897
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• 2003

Recently, the rapid growth of mobile radio system has led to an increasing demand of low-cost high performance communication IC's. In this paper, we have designed RF front end for wireless LAN receiver employ zero-IF architecture. A low-noise amplifier (LNA) and double-balanced mixer is included in a front end. The zero-IF architecture is easy to integrate and good for low power consumption, so that is coincided to requirement of wireless LAN. But the zero-IF architecture has a serious problem of large offset. Image-reject mixer is a good structure to solve offset problem. Using offset compensation circuit is good structure, too. The front end is implemented in 0.25 ${\mu}m$ CMOS technology. The front end has a noise figure of 5.6 dB, a power consumption of 16 mW and total gain of 22 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1318-1323
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• 2010

A lot of demand for parts of millimeter wave band, as would be expected 57~63 GHz band down conversion mixer was designed and fabricated using IHP 0.25 um SiGe process. Designed and fabricated mixer was double balanced type and located reduced 3D balun at RF port and buffer amplifier at outport for suppression LO signal and conversion gain. Fabricated mixer measured conversion gain of 13.8 dB, $P1dB_{in}$ -17 dBm and 88 mA of current consumption characteristics, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.30-40
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• 2002

A 2.45GHz double-balanced modified Gilbert-type CMOS up-conversion mixer design is introduced, where the PMOS current-reuse bleeding technique is demonstrated to be efficient in improving conversion gain, linearity, and noise performance. An LO buffer is included in the mixer design to perform single-ended to differential conversion of the LO signal on chip. Simulation results of the design based on careful modeling of all active and passive components are examined to explain in detail about the characteristic improvement and degradation provided by the proposed design. Two kinds of chips were fabricated using a standard $0.35\mu\textrm$ CMOS process, one of which is the mixer chip without the LO buffer and the other is the one with it. The measured characteristics of the fabricated chips are quite excellent in terms of conversion gain, linearity, and noise, and they are in close match to the simulation results, which demonstrates the adequacy of the modeling approach based on the macro models for all the active and passive devices used in the design. Above all the benefits provided by the current-reuse bleeding technique, the improvement in noise performance seems most valuable.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.10A
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• pp.847-851
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• 2011

In this paper, we reported on a high performance MMIC star mixer for millimeter-wave applications. The star mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process on 2 mil thick GaAs substrate. The average conversion loss of 13 dB was measured in the RF frequency range of 81 GHz to 86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-LO isolation characteristics are greater than 30 dB and the input 1-dB compression are approximately 4 dBm. The total chip size is 0.8 mm ${\times}$ 0.8 mm.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.6
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• pp.141-147
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• 2008

This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.79-85
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• 2004

In this paper, the RF-ID system for ubiquitous tagging applications has been designed, fabricated and analysed. The RF-ID System consists of passive RF-ID Tag and Reader. The passive RF-ID tag consists of rectifier using zero-bias schottky diode which converts RF power into DC power, ID chip, ASK modulator using bipolar transistor and slot loop antenna. We suggest an ASK undulation method using a bipolar transistor to compensate the disadvantage of the conventional PIN diode, which needs large current Also, the slot loop antenna with wider bandwidth than that of the conventional patch antenna is suggested The RF-ID reader consist of patch array antenna, Tx/Rx part and ASK demodulator. We have designed the RF-ID System using EM and circuit simulation tools. According to the measured results, The power level of modulation signal at 1 m from passive RF-ID Tag is -46.76 dBm and frequency of it is 57.2 KHz. The transmitting power of RF-ID reader was 500 mW

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.712-712
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• 2006

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.713-713
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• 2006

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.919-923
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• 2003

In this paper, a double-sided planar balun using Microstrip-to-CPW coupled structure is fabricated and measured. The measured amplitude and phase imbalance are, respectively, less than 0.2 dB and 2.1$^{\circ}$ in a wide frequency range from 2.44 GHz to 4.33 GHz. It is expected that the proposed balun can improved the performance of balanced mixer, amplifier and feeding network of antennas. Also, it can be used in many microwave multilayer structures due to its structural characteristics.