Browse > Article
http://dx.doi.org/10.5207/JIEIE.2008.22.6.141

Design of Double Bond Down Converting Mixer Using Embeded Balun Type  

Lee, Byung-Sun (김포대학 유비쿼터스IT과)
Roh, Hee-Jung (김포대학 유비쿼터스IT과)
Seo, Choon-Weon (김포대학 유비쿼터스IT과)
Publication Information
Journal of the Korean Institute of Illuminating and Electrical Installation Engineers / v.22, no.6, 2008 , pp. 141-147 More about this Journal
Abstract
This paper describes the design of frequency down converting Mixer in the receiver to use compound semiconductor and CMOS product process. The basic theory and structure of frequency down converting Mixer is surveyed, and we design mixer circuit with active balun which use the compound semiconductor and CMOS process. This mixer convert a single ended signal to differential signal at input port of RF and LO instead of matching circuit to get dual band balanced mixer structure and characteristic broadband. This designed mixer has a conversion gain $-1{\sim}-6[dB]$ at $2{\sim}6[GHz]$ bandwidths. However, the simulation of the designed mixer with active balun has the result of a 7[dB] conversion gain for -2[dBm] LO input power and -10[dBm] input P1[dB] at 5.8[GHz].
Keywords
Mixer; Balun; CMOS; Compound Semiconductor;
Citations & Related Records
연도 인용수 순위
  • Reference
1 T. Shimura, Y. Mimino, K. Nakamura, Y. Aoki, and S. Kuroda, "High Isolation V-Band SPDT Switch MMIC for High Power Use", IEEE MTT-s Digest, 2001
2 H. Tosaka, T. Fujii, K. Miyakoshi, K. Ikenaka, and M. Takahashi, "An Antenna Switch MMIC Using E/D Mode P-HEMT for GSM/DCS/PCS/WCDMA Bands Applications," IEEE RFIC Symp. Dig., pp. 519-522, June 2003
3 K. L. Fong, "A 2.4[GHz] Monolithic Mixer for Wireless LAN Application," IEEE Custom IC Conf., pp. 9.4.1-9.4.4, 1997
4 A. Abidi et. al., "The Future of CMOS Wireless Transceivers," in Int. Solicl-State Circuits Conf, pp. 1 18- 1 19, Feb. 1996
5 M. Masuda, N. Ohbata, H. Ishiuchi, K. Onda, and R. Yamamoto, "High Power Heterojunction GaAs Switch IC with P-l[dB] of More Than 38[dBm] for GSM Application," IEEE GaAs IC Symposium Digest, pp. 229-232, 1998
6 H. Uda, T. Yamada, T. Sawai, K. Nogawa, and Y. Harada, "High Performance GaAs Switch IC''s Fabricated Using MESFETs with Two Kinds of Pinch-off Voltage and A Symmetrical Pattem Configuration," IEEE Journal of Solid-state Circuits,Vol. 29, No.10, pp. 1262-1269, Oct 1994   DOI   ScienceOn