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http://dx.doi.org/10.7840/KICS.2011.36A.10.847

High Performance MMIC Star Mixer for Millimeter-wave Applications  

Ryu, Keun-Kwan (국립한밭대학교 전자공학과)
Yom, In-Bok (한국전자통신연구원 위성무선융합연구부 무선RF탑재기술팀)
Kim, Sung-Chan (국립한밭대학교 전자공학과)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.36, no.10A, 2011 , pp. 847-851 More about this Journal
Abstract
In this paper, we reported on a high performance MMIC star mixer for millimeter-wave applications. The star mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process on 2 mil thick GaAs substrate. The average conversion loss of 13 dB was measured in the RF frequency range of 81 GHz to 86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-LO isolation characteristics are greater than 30 dB and the input 1-dB compression are approximately 4 dBm. The total chip size is 0.8 mm ${\times}$ 0.8 mm.
Keywords
Star mixer; Marchand balun; Double balanced mixer; Millimeter-wave; PHEMT;
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