• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.27-33
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• 2017

The determination of disulfide bonds is important for comprehensive understanding of the chemical structure of protein. So far, many strategies for the disulfide bond analysis have been suggested in terms of speed and sensitivity. However, most of these strategies have not considered free thiol residues in the target protein in the process of determining the disulfide bond. We suggested the strategy which was composed of four steps for the identification of disulfide bonds; the first step was the prediction of possible disulfide bonds, the second step was the determination of free cysteine residues, the third step was the analysis of disulfide bond using a high-resolution mass spectrometry, and the final step was the determination of disulfide bonds based on the comprehensive verification. In this study, we performed the characterization of disulfide bonds for the recombinant protein (HRPE1), where 1 and 5 inter- and intra-chain disulfide bonds were identified, respectively.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.631-635
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• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.690-693
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• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.435-438
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• 2012

As lead-free piezoelectric materials, $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3+x$ mol% (where x = 0, 0.5, 1, 1.5, 2, 2.5 and 3, respectively) ceramics were fabricated by a conventional sintering process. The doping effects on the microstructure and electrical properties of the $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ ceramics were systematically investigated. When the 3 mol % $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ samples were sintered at $1,080^{\circ}C$ for 5 hrs in air, these ceramics showed excellent values of density=4.20 $g/cm^3$, piezoelectric constant ($d_{33}$)=174 pC/N and phase transition temperature$(T_c)=421.6^{\circ}C$, respectively.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.1-6
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• 2017

A comparative study of microwave and conventional sintering of lead-free $Bi_{1/2}(Na_{0.82}K_{0.18})_{1/2}TiO_3-BaZrO_3-CuO$ ceramics is presented. It was found that microwave sintering (MWS) can be successfully applied to the fabrication of large strain Bi-perovskite with electric field-induced strains comparable to those obtained with conventional sintering (CFS). Although MWS resulted in smaller grained microstructures than CFS, the ferroelectric properties were stronger in MWS-derived specimens than in the CFS-derived ones. The piezoelectric strain constant $d_{33}{^*}$ of the CFS-derived specimens reached a maximum value of 372 pm/V after sintering at $1100^{\circ}C$, whereas that of MWS-derived specimens peaked at $950^{\circ}C$ with a $d_{33}{^*}$ value of 324 pm/V.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2917-2921
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• 2014

Cerium-activated yttrium aluminate ($Y_3Al_5O_{12}:Ce^{3+}$) exhibiting a garnet structure has been widely utilized in the production of light emitting diodes (LEDs) as a yellow emitting phosphor. The commercialized yttrium aluminum garnet (YAG) phosphor is typically synthesized by a solid-state reaction, which produces irregular shape particles with a size of several tens of micrometers by using the top-down method. To control the shape and size of particles, which had been the primary disadvantage of top-down synthetic methods, we synthesized YAG:Ce nanoparticles with a diameter of 500 nm using a coprecipitation method under the atmospheric pressure without the use of template or special equipment. The precursor particles were formed by refluxing an aqueous solution of the nitrate salts of Y, Al, and Ce, urea, and polyvinylpyrrolidone (55 K) at $100^{\circ}C$ for 12 h. YAG:Ce nanoparticles were formed by the calcination of precursor particles at $1100^{\circ}C$ for 10 h under atmospheric conditions. The phase identification, microstructure, and photoluminescent properties of the products were evaluated by X-ray powder diffraction, scanning electron microscopy, absorption spectrum and photoluminescence analyses.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.107-109
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• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.227-230
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• 2008

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.342-342
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• 2012

Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.