Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Solid Electrolytes Characteristics Based on Cu-Ge-Se for Analysis of Programmable Metallization Cell

  • Nam, Ki-Hyun (Department of Electrical Material Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electrical Material Engineering, Kwangwoon University)
  • Published : 2008.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

Keywords

References

  1. J. Hajto, P. J. S. Ewen, R. E. Belford, and A. E. Owen, "Interference grating fabrication in spincoated $As_2S_3$ films", Thin Solid Films, Vol. 200, p. 229, 1991 https://doi.org/10.1016/0040-6090(91)90195-4
  2. M. N. Kozicki, S. W. Hsia, A. E. Owen, and P. J. S. Ewen, "Pass - a chalcogenide-based lithography scheme for I.C. fabrication", J. Non-Cryst. Solids Vol. 137-138, p. 1341, 1991 https://doi.org/10.1016/S0022-3093(05)80372-2
  3. T. Kawaguchi, S. Maruno, and S. R. Elliott, "Photoinduced surface deposition of metallic silver in Ag---As---S glasses: effect of addition of other elements", J. Non-Cryst. Solids, Vol. 212, p. 166, 1997 https://doi.org/10.1016/S0022-3093(97)00030-6
  4. M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, "Non-volatile memory based on solid electrolytes", Proceedings of the 2004 Non- Volatile Memory Technology Symposium, p. 10, 2004
  5. R. Symanczyk, M. Balakrishnan, C. Gopalan, T. Happ, M. Kozicki, M. Kund, T. Mikolajick, M. Mitkove, M. Park, C.-U. Pinnow, J. Robertson, and K.-D. Ufert, "Electrical characterization of solid state ionic memory elements", Proceedings of the 2003 Non-Volatile Memory Technology Symposium, p. 17-1, 2003
  6. M. N. Kozicki, M. Park, and M. Mitkova, "Nanoscale memory elements based on solid state electrolytes", IEEE Trans. Nanotechnology, Vol. 4, No. 3, p. 331, 2005 https://doi.org/10.1109/TNANO.2005.846936
  7. H. Choi, S. M. Koo, W. J. Cho, Y. H. Lee, and H. B. Chung, "Properties on electrical resistance change of Ag-doped chalcogenide thin films application for programmable metallization cell", J. of KIEEME(in Korean), Vol. 20, No. 12, p. 1022, 2007 https://doi.org/10.4313/JKEM.2007.20.12.1022