• 제목/요약/키워드: Distributed-Bragg Reflector

검색결과 52건 처리시간 0.026초

Fabrication and Characterization of Free-Standing DBR Porous Silicon Film

  • Um, Sungyong;Sohn, Honglae
    • 통합자연과학논문집
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    • 제7권1호
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    • pp.1-4
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    • 2014
  • Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

Biosensor Based on Distributed Bragg Reflector Photonic Crystals for the Detection of Protein A

  • 정대혁
    • 통합자연과학논문집
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    • 제3권1호
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    • pp.33-37
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    • 2010
  • The functionalized photonic crystals of porous silicon biosensor was prepared for the application as a label-free biosensor based on distributed Bragg reflector interferometer. Prepared distributed Bragg reflector of porous silicon biosensor displayed sharp reflection in the optical reflective spectra. The mean of construction of molecular architectures on distributed Bragg reflector of porous silicon surfaces was investigated for the step-by-step binding interaction with amines, biotin, avidin, and biotinylated protein A. The subsequent introduction of avidin, and biotinylated protein A resulted in the reflectivity shifted to longer wavelengths, indicative of a change in refractive indices induced by binding of biomolecules.

Multiple-Bit Encodings of Bragg Photonic-structures by Using Consecutive Etch with Various Square Wave Currents

  • Lee, Bo-Yeon;Hwang, Minwoo;Cho, Hyun;Kim, Hee-Chol;Cho, Sungdong
    • 통합자연과학논문집
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    • 제4권3호
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    • pp.192-196
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    • 2011
  • New method to encode multiple photonic features of Bragg type reflector on silicon wafer has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

수소화 비정질 실리콘 기반 분배 브래그 하부 반사기를 적용한 고효율 광 격자 커플러 (High-Efficency Grating Coupler with Distributed-Bragg Bottom Reflector Based on Hydrogenated Amorphous Silicon)

  • 박지환
    • 한국전자통신학회논문지
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    • 제16권2호
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    • pp.241-246
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    • 2021
  • 본 연구에서는 수소화 비정질 실리콘 (a-Si:H) 기반 분배 브래그 반사기 (Distributed Bragg Reflector, DBR)을 적용한 광 격자 커플러를 제안하여 라이다 시스템에서 고효율의 나노 광 방사기로 사용할 수 있다는 가능성을 보여주었다. 분배 브래그 반사기는 아랫방향으로 누설되는 광학 장을 감소시켜 커플링 효율을 높게 한다. 결과적으로 제안된 광 격자 커플러는 기존의 광 격자 커플러와 비교하여 약 1.4 배가 높은 far-field 세기를 가진다는 것을 보여주었다.

U형 Sampled Grating DBR 레이저 다이오드의 설계 및 분석 (Design and Analysis of U-shaped Sampled Grating Distributed Bragg Reflector Lasers)

  • 김경래;정영철
    • 한국광학회지
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    • 제28권5호
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    • pp.229-235
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    • 2017
  • U형 구조의 SGDBR (Sampled Grating Distributed Bragg Reflector) 레이저 다이오드를 설계하고, 시간 영역 시뮬레이션 방법으로 해석하였다. U형 구조의 SGDBR 레이저 다이오드는 SGDBR, 능동, 수동, TIR (Total Internal Reflection) 거울 영역들로 이루어져 있어서, 각 영역들 간의 결합 손실의 영향을 면밀히 고려하여야 한다. 설계된 U형 SGDBR 레이저 다이오드의 파장 가변범위는 1525 nm에서부터 1570 nm로서 시뮬레이션을 통하여 확인하였다. 설계 튜닝 범위에서 완전한 레이저 다이오드 특성을 얻기 위해서는, 미러 영역에서의 손실은 약 2 dB 이하이고, 능동 및 수동 영역 간 butt 결합에서의 매질 간 굴절률 차이는 0.1 이하를 유지하도록 도파 구조가 설계되어야 한다.

파장가변 Sampled-grating Distributed Bragg Reflector (SG-DBR) 레이저 다이오드 제작 (Fabrication and Characteristics of Tunable Butt-Coupled Sampled-grating Distributed Bragg Reflector (SG-DBR) Laser Diodes)

  • 이지면;오수환;고현성;박문호
    • 한국전기전자재료학회논문지
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    • 제17권1호
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    • pp.16-20
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    • 2004
  • We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

Distributed Bragg Reflector, Microcavity 구조를 갖는 다공질규소의 반사율 스펙트럼 (Reflectance spectrum properties of DBR and microcavity porous silicon)

  • 김영유;김한중
    • 한국결정성장학회지
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    • 제19권6호
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    • pp.293-297
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    • 2009
  • 본 연구에서는 p형 단결정 규소 기판을 에칭시켜 다층구조를 갖는 DBR 및 Microcavity 다공질규소를 제작하고, 그 반사율 스펙트럼을 조사하였다. 그 결과 다층구조를 갖는 다공질규소의 반사율 스펙트럼에서 프린지 패턴의 수는 단일층 다공질규소의 경우보다 상대적으로 많았으며, 특정 파장에서 반사율은 90 % 이상으로 나타났다. 그리고 DBR 다공질규소에서 최대 반사율 봉우리의 FWHM 값은 33 nm로 매우 좁게 나타났다.

Electroabsorption modulator-integrated distributed Bragg reflector laser diode for C-band WDM-based networks

  • Oh-Kee Kwon;Chul-Wook Lee;Ki-Soo Kim
    • ETRI Journal
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    • 제45권1호
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    • pp.163-170
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    • 2023
  • We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

Investigation of Relationship between Reflection Resonance and Applied Current Density in Bragg Photonic Crystal

  • Kim, Bumseok
    • 통합자연과학논문집
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    • 제5권1호
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    • pp.27-31
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    • 2012
  • Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

저 전류 및 고 효율로 동작하는 양자 우물 매립형 butt-coupled sampled grating distributed bragg reflector laser diode 설계 및 제작 (Design and Fabrication of butt-coupled(BT) sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD) using planar buried heterosture(PBH))

  • 오수환;이철욱;김기수;고현성;박상기;박문호;이지면
    • 한국광학회지
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    • 제15권5호
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    • pp.469-474
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    • 2004
  • 본 논문에서는 저 전류 및 고 효율로 동작하는 planar buried heterostructure(PBH) 구조로 sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD)를 처음으로 설계하고 제작하였다. 특히 활성층과 도파로층의 높은 결합 효율을 얻기 위해 건식 식각과 습식 식각을 같이 사용하여 결함이 거의 없는 butt-coupling(BT) 계면을 형성하였다. 제작된 파장 가변레이저의 평균 발진 임계전류는 약 12 mA로 ridged waveguide(RWG)와 buried ridge stripe(BRS) 구조로 제작된 결과 보다 두 배 정도 낮게 나타났으며, 광 출력은 200 mA에서 약 20 mW 정도로 RWG 와 BRS 보다 각각 9 mW, 13 mW 더 우수하게 나타났다. 그리고 파장 가변 영역을 측정한 결과 44 nm로 설계결과와 일치하였으며, 최대 파장 가변 영역 안에서 출력 변화 폭이 5 dB 이내로서 RWG 구조의 9 dB보다 출력변화 폭이 4 dB 적게 나타났다. 전체 파장 가변 영역에서 SMSR이 35 dB 이상으로 나타났다.