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http://dx.doi.org/10.3807/KJOP.2004.15.5.469

Design and Fabrication of butt-coupled(BT) sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD) using planar buried heterosture(PBH)  

Oh Su Hwan (Electronics and Telecommunications Research Institute)
Lee Chul-Wook (Electronics and Telecommunications Research Institute)
Kim Ki Soo (Electronics and Telecommunications Research Institute)
Ko Hyunsung (Electronics and Telecommunications Research Institute)
Park Sahnggi (Electronics and Telecommunications Research Institute)
Park Moon-Ho (Electronics and Telecommunications Research Institute)
Lee Ji-Myon (Dept. of Materials Sci. and Metallurgical Eng, Sunchon National University)
Publication Information
Korean Journal of Optics and Photonics / v.15, no.5, 2004 , pp. 469-474 More about this Journal
Abstract
We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.
Keywords
semiconductor laser; tunable laser; sampled grating distributed bragg reflector laser diode; integrated laser;
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