ETRI Journal

  • 제45권1호
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  • Pages.163-170
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  • 2023
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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Electroabsorption modulator-integrated distributed Bragg reflector laser diode for C-band WDM-based networks

  • Oh-Kee Kwon (Photonic Convergence Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Chul-Wook Lee (Photonic Convergence Components Research Group, Electronics and Telecommunications Research Institute) ;
  • Ki-Soo Kim (Photonic Convergence Components Research Group, Electronics and Telecommunications Research Institute)
  • 투고 : 2021.08.30
  • 심사 : 2021.12.28
  • 발행 : 2023.02.20
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초록

We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBRLD using a butt-joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively.

키워드

과제정보

This work was supported by the Korea Innovation Foundation funded by Korea Government (MSIT) (no. 2021-DD-RD-0082, Commercialization of 8 wavelength DBR-EAM chip with modulation rate of 25 Gb/s per channel), the ICT R&D program MSIP/IITP (no. 2020-0-00847, Development of 5G+ mobile fronthaul transport technology), and the Electronics and Telecommunication Research Institute Grant funded by the Korea Government (no. 21YB1810/21EB1210, Development of DBR-EAM LD chip technology for commercialization).

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