Browse > Article

Reflectance spectrum properties of DBR and microcavity porous silicon  

Kim, Young-You (Department of Physics, Kongju National University)
Kim, Han-Jung (Department of Physics, Kongju National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.19, no.6, 2009 , pp. 293-297 More about this Journal
Abstract
In this paper, we made three kinds of porous silicon samples (single layer, distributed Bragg reflector, and microcavity) by electrochemical etching p-type silicon substrate. And then, we investigated their reflectance spectrum properties. We found that the number of fringe patterns and the maximum reflectivity of porous silicon multilayer increased compared with a porous silicon sinlge layer. In addition, we can observe that the DBR (distributed Bragg reflector) porous silicon has a full-width at half-maximum about 33 nm which is narrower than the porous silicon single layer and porous silicon microcavity.
Keywords
Porous silicon; Single layer; Multilayer; DBR; Microcavity; Reflectance spectrum;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 L.T. Canham, T.I. Cox, A. Loni and A.J. Simons, "Progress towards silicon optoelectronics using porous silicon technology", Applied Surface Science 102 (1996) 436   DOI   ScienceOn
2 K.D. Hirschaman, L. Tsybeskov, S.P. Duttagupta and P.M. Fauchet, "Silicon-based light-emitting devices integrated into microelectronic circuits", Nature 384 (1996) 338   DOI   ScienceOn
3 Y.-Y. Kim, S.-K. Lee, H.-J. Kim, S.-H. Park, E.-J. Ahn and K.-W. Lee, "Fabrication of a porous-silicon-based ethanol sensor", SAEMULLI 51 (2005) 243
4 I. Ferreira, E. Fortunato and R. Martins, "Ethanol vapour detector based in porous a-Si:H films produced by FW-CVD technique", Sensors and Actuators B 100 (2004) 236   DOI   ScienceOn
5 M. Bruchez, M. Moronne, P. Gin, S. Weiss and A.P. Alivisatos, "Semiconductor nanocrystals as fluorescent biological labels", Science 281 (1998) 2013   DOI   PUBMED
6 M.G. Berger, M. Thonissen, R. Arens-Fischer, H. Munder, H. Luth, M. Arbtzen and W. Theiss, "Investigation and design of optical properties of porosity superlattices", Thin Solid Films 255 (1995) 313   DOI   ScienceOn
7 H. Fll, M. Christophersen, J. Carstensen and G. Hassw, "Formation and application of porous silicon", Materials Science and Engineering R39 (2002) 93   DOI   ScienceOn
8 Y.-Y. Kim, H.-J. Kim and K.-W. Lee, "The potential for alcohol-containing gas sensors based on DBR porous silicon", J. Korean Phys. Soc. 55 (2009) 415   DOI   ScienceOn
9 L.T. Canham, "Properties of Porous Silicon", L.T. Canham, Ed. (IEE Inspec, London, 1997) p. 83
10 M. Araki, H. Koyama and N. Koshida, "Optical cavity based on porous silicon superlattice technology", Jpn. J. Appl. Phys. 35 (1996) 1041   DOI
11 Y.-Y. Kim, J.-H. Jeon, E.-J. Ahn and K.-W. Lee, "Photoluminescence resonance properties of a porous silicon microcavity", SAEMULLI 44 (2002) 224
12 L. Pavesi, "Porous silicon dielectric multilayers and microcavities", La Rivista del Nuovo Cimento 20 (1997) 1   DOI
13 S. Jang, Y. Koh, J. Kim, J. Park, C. Park, S.J. Kim, S. Cho, Y.C. Ko and H. Sohn, "Detection of organophosphates based on surface-modified DBR porous silicon using LED light", Materials Letters 62 (2008) 552   DOI   ScienceOn
14 C.S. Solanki, R.R. Bilyalov, J. Portmans, J. Nijs and R. Mertens, "Porous silicon layer transfer processes for solar cells", Solar Energy Materials and Solar Cells 83 (2004) 101   DOI   ScienceOn
15 C. Barratto, G. Faglia, G. Sberveglieri, Z. Gaburro, L. Pancheri, C. Oton and L. Pavesi, "Multiparametric porous silicon sensors", Sensors 2 (2002) 121   DOI
16 L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Appl. Phys. Lett. 57 (1990) 1046   DOI