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http://dx.doi.org/10.4313/JKEM.2004.17.1.016

Fabrication and Characteristics of Tunable Butt-Coupled Sampled-grating Distributed Bragg Reflector (SG-DBR) Laser Diodes  

이지면 (한국전자통신연구원 반도체원천기술연구소)
오수환 (한국전자통신연구원 반도체원천기술연구소)
고현성 (한국전자통신연구원 반도체원천기술연구소)
박문호 (한국전자통신연구원 반도체원천기술연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.1, 2004 , pp. 16-20 More about this Journal
Abstract
We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.
Keywords
InP; Laser diode; Sampled grating; DBR; Butt-coupling;
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Times Cited By KSCI : 3  (Citation Analysis)
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