• Journal of Information Display
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• 제10권3호
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• pp.101-106
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• 2009

In this study, a physical OLED analog behavior model for SPICE simulation was described using the Verilog-A language. The model was presented through theoretical equations for the J-V characteristics of OLED derived according to the internalcarrier emission equation based on a diffusion model at the Schottky barrier contact, and the mobility equation based on the Pool-Frenkel model. The accuracy of this model was examined by comparing it with the results of the device simulation that was conducted.

• 정보보호학회논문지
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• 제27권5호
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• pp.993-1000
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• 2017

임베디드 장비의 가용성을 고려했을 때, 안전성과 효율성이 동시에 제공될 수 있는 1차 마스킹과 하이딩 대응기법과 같이 조합된 대응기법은 꽤 매력적이다. 특히, 효율성을 제공하기 위하여 첫 번째와 마지막 라운드의 혼돈 및 확산 계층에 조합된 대응기법을 적용할 수 있다. 또한, 중간 라운드에는 1차 마스킹 또는 대응기법이 없게 구성한다. 본 논문에서, 확산 계층의 출력에서 낮은 복잡도를 갖는 최신 부채널 분석을 제안한다. 일반적으로, 공격자는 높은 공격 복잡도 때문에 확산 계층의 출력을 공격 타겟으로 설정할 수 없다. 블록 암호의 확산 계층이 AND 연산들로 구성되어있을 때, 공격 복잡도를 줄일 수 있다는 것을 보인다. 여기서, 우리는 주 알고리즘을 SEED로 간주한다. 그러면, S-box 출력과 확산 계층 출력과의 상관관계에 의해 $2^{32}$ 를 갖는 공격 복잡도는 $2^{16}$으로 줄일 수 있다. 더욱이, 일반적으로 주 타겟이 S-box 출력이라는 사실과 비교하였을 때, 시뮬레이션 파형에서 요구되는 파형 수가 43~98%가 감소할 수 있다는 것을 입증한다. 게다가, 실제 장비에서 100,000개 파형에 대해 일반적인 방법으로 옳은 키를 추출하는 것을 실패하였음에도, 제안된 방법에 의해 옳은 키를 찾는데 8,000개의 파형이면 충분하다는 것을 보인다.

• 경영과학
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• 제22권1호
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• pp.179-197
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• 2005

This study examines market acceptance for DMB service, one of the touted new business models in Korea's next-generation mobile communications service market, using adoption end diffusion of innovation as the theoretical framework. Market acceptance for DMB service was assessed by predicting the demand for the service using the Bass model, and the demand variability over time was then analyzed by integrating the innovation adoption model proposed by Rogers (2003). In our estimation of the Bass model, we derived the coefficient of innovation and coefficient of imitation, using actual diffusion data from the mobile telephone service market. The maximum number of subscribers was estimated based on the result of a survey on satellite DMB service. Furthermore, to test the difference in diffusion pattern between mobile phone service and satellite DMB service, we reorganized the demand data along the diffusion timeline according to Rogers' innovation adoption model, using the responses by survey subjects concerning their respective projected time of adoption. The comparison of the two demand prediction models revealed that diffusion for both took place forming a classical S-curve. Concerning variability in demand for DMB service, our findings, much in agreement with Rogers' view, indicated that demand was highly variable over time and depending on the adopter group. In distinguishing adopters into different groups by time of adoption of innovation, we found that income and lifestyle (opinion leadership, novelty seeking tendency and independent decision-making) were variables with measurable impact. Among the managerial variables, price of reception device, contents type, subscription fees were the variables resulting in statistically significant differences. This study, as an attempt to measure the market acceptance for satellite DMB service, a leading next-generation mobile communications service product, stands out from related studies in that it estimates the nature and level of acceptance for specific customer categories, using theories of innovation adoption and diffusion and based on the result of a survey conducted through one-to-one interviews. The authors of this paper believe that the theoretical framework elaborated in this study and its findings can be fruitfully reused in future attempts to predict demand for new mobile communications service products.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.905-909
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• 2009

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.49-53
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• 2005

The nanoparticle deposition chamber, which is used for quantum dot semiconductor memory applications, is designed by means of numerical simulation. In this research, the numerical simulations for deposition chamber were performed by commercial software, FLUENT. The deposition of nanoparticles is calculated by diffusion force, thermophoresis and electrophoresis of particles. As a results, when the diffusion force was considered, the most of particles deposited in the wall of deposition chamber. But as considering thermophoresis and electrophoresis of particles, the particles were deposited wafer surface, perfectly.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권1호
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• pp.18-22
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• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.63-66
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• 2003

In this paper, the electrical characteristics of single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of poly backseat was researched. The oxide quality was examined through capacitance-voltage characteristics, and besides, it will be describe the capacitance-voltage characteristics of the single oxide layer by semiconductor device simulation.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.211-214
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• 2004

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidationenhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data and $0.13 {\mu}m$ device characteristics such as $V_{th}$ and $Id_{sat}$ with errors less than $5 \%$ between simulation and experiment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1556-1557
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• 2007

LCD BLU에 광원의 수명을 측정하고, 고장모드를 분석하기 위해서는 광원을 구성하고 있는 각각의 성분 중에서 광원 자체를 구성하고 있는 R/G/B 광원에 대한 Burn-in test 및 고장모드를 분석하였다. LCD BLU에 있어서 R/G/B LED광원의 역할은 BLU 자체의 수명과 성능에 가장 큰 영향을 미친다. 서로 각각 사용조건하에서의 수명과 성능의 차이에 따라서 BLU 자체의 수명이 결정된다. 이를 평가가기 위해 LED device에 대한 가속수명테스트를 위한 Burn-in test를 실시하였으며, 발생한 고장모드를 분석하였다. 분석결과 누설전류 증가로 인한 불량이 주로 발생하였다. 누설전류 증가를 평가하기 위해 Photo emission microscope(PHEMOS-1000, MoDooTEK Inc.)을 이용하여 저전류에서의 LED chip의 누설전류에 의한 발광을 관찰함으로 인해, LED chip의 신뢰성 및 평가 기준이 됨을 알 수 있다.

• Journal of Magnetics
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• 제7권3호
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• pp.98-100
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• 2002

Tunnel magnetoresistive devices using an individual multi-walled carbon nanotube were fabricated and their low-temperature electrical transport propertiers were investigated. With the ferromagnetic Co electrodes, the multi-walled carbon nanotube exhibited hysteretic magnetoresistance curve at low temperatures. Depending on the temperature and the bias current, the magnetoresistance ratio can be as high as 16% at the temperature of 2.2 K. Such high magnetoresistance ratio indicates a long diffusion length of the multi-walled carbon nanotube.