Journal of Magnetics

The Korean Magnetics Society (한국자기학회)
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Characteristics of a Carbon Nanotube-based Tunnel Magnetoresistance Device

  • Kim, Jinhee (Electronic Device Group, Korea Research Institute of Standards and Science) ;
  • Woo, Byung-Chill (Electronic Device Group, Korea Research Institute of Standards and Science) ;
  • Kim, Jae-Ryoung (Department of Physics, Chonbuk National University) ;
  • Park, Jong-Wan (Department of Physics, Chonbuk National University) ;
  • So, Hye-Mi (Department of Physics, Chonbuk National University) ;
  • Kim, Ju-Jin (Department of Physics, Chonbuk National University)
  • Published : 2002.09.01
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Abstract

Tunnel magnetoresistive devices using an individual multi-walled carbon nanotube were fabricated and their low-temperature electrical transport propertiers were investigated. With the ferromagnetic Co electrodes, the multi-walled carbon nanotube exhibited hysteretic magnetoresistance curve at low temperatures. Depending on the temperature and the bias current, the magnetoresistance ratio can be as high as 16% at the temperature of 2.2 K. Such high magnetoresistance ratio indicates a long diffusion length of the multi-walled carbon nanotube.

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