Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study for Transient Enhanced Diffusion of Indium and Its Application to μm Logic Devices

  • Lee Jun-Ha (Department of Computer System Engineering, Sangmyung University) ;
  • Lee Hoong-Joo (Department of Computer System Engineering, Sangmyung University)
  • Published : 2004.12.01
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Abstract

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidationenhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data and $0.13 {\mu}m$ device characteristics such as $V_{th}$ and $Id_{sat}$ with errors less than $5 \%$ between simulation and experiment.

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