[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4283/JMAG.2002.7.3.098

Characteristics of a Carbon Nanotube-based Tunnel Magnetoresistance Device

Kim, Jinhee (Electronic Device Group, Korea Research Institute of Standards and Science)
Woo, Byung-Chill (Electronic Device Group, Korea Research Institute of Standards and Science)
Kim, Jae-Ryoung (Department of Physics, Chonbuk National University)
Park, Jong-Wan (Department of Physics, Chonbuk National University)
So, Hye-Mi (Department of Physics, Chonbuk National University)
Kim, Ju-Jin (Department of Physics, Chonbuk National University)

Publication Information

Journal of Magnetics / v.7, no.3, 2002 , pp. 98-100 More about this Journal

Abstract

Tunnel magnetoresistive devices using an individual multi-walled carbon nanotube were fabricated and their low-temperature electrical transport propertiers were investigated. With the ferromagnetic Co electrodes, the multi-walled carbon nanotube exhibited hysteretic magnetoresistance curve at low temperatures. Depending on the temperature and the bias current, the magnetoresistance ratio can be as high as 16% at the temperature of 2.2 K. Such high magnetoresistance ratio indicates a long diffusion length of the multi-walled carbon nanotube.

Keywords

carbon nanotube; magnetic tunnel junction; spin injection; spintronic device;

Citations & Related Records

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