• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• 대한기계학회논문집B
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• 제31권12호
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• pp.979-985
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• 2007

Spray combustion characteristics of the conducting fuel electrospray has been studied for clean combustion technology. The electrospraying multiplexed system which can maintain the characteristics of the cone-jet mode is able to obtain charged micro droplets with high flow rate. In addition, they have monodisperse distribution during operating the electrospray in the cone-jet mode. The multiplexed grooved nozzle system with the extractor was applied to this experimental device set up. The stable grooved mode can be generated by the grooved nozzle and this electrospray system was applied to the diffusion combustion. It is the first step to discover the diffusion combustion characteristics of the electrospray, In case of the single grooved nozzle electrospray the diffusion flames are occurred at each Jet of grooved mode and they are quite stable. The exhaust gas analysis was indicated that there is the critical point which can make very stable diffusion combustion

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1212-1215
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• 2009

The theoretical equations for J-V characteristics in an OLED was derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The J-V characteristics of OLED are presented using a behavioral model for analog systems (Verilog-A language), and the accuracy of this model was verified by comparing with the device simulation results.

• 대한전자공학회논문지
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• 제27권9호
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• pp.1409-1418
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• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.

• 한국산업융합학회 논문집
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• 제22권6호
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• pp.767-773
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• 2019

The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

• 전자공학회논문지B
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• 제33B권3호
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• pp.88-95
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• 1996

Recently, the use of color data is growing fast in the area of image processing. To represent full resolution image on a limited output device, image has to be quantized an dithered. So, many dithering techniques are foundd in the printing. In this paper, we propose nonlinear quantization to consider the overlapping phenomena of neighboring printing dots and modified dot diffusion algorithm to compensate the color degradation produced in the quantization process. In the modified dot-diffusion quantization errors to be diffused are adjusted to improve both image blur and color change produced in the dot diffusion. The printed image obtained by the proposed color dithering method has higher visual quality an less color degradation than the images by conventional printing method.

• Bulletin of the Korean Chemical Society
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• 제32권6호
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• pp.2039-2044
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• 2011

A semi-continuous and automated method for quantifying atmospheric ammonia at the parts per billion level has been developed. The instrument consists of a high efficiency diffusion scrubber, an electrolytic on-line anion exchange device, and a conductivity detector. Water soluble gases in sampled air diffuse through the porous membrane and are absorbed in an absorbing solution. Interferences are eliminated by using an anion exchange devises. The electrical conductivity of the solution is measured without chromatographic separation. The collection efficiency was over 99%. Over the 0-200 ppbv concentration range, the calibration was linear with $r^2$ = 0.99. The lower limit of detection was 0.09 ppbv. A parallel analysis of Seoul air over several days using this method and a diffusion scrubber coupled to an ion chromatography system showed acceptable agreement, $r^2$ = 0.940 (n = 686). This method can be applied for ambient air monitoring of ammonia.

• 전자공학회논문지A
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• 제33A권2호
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.180-184
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• 2004

This paper proposes a novel methodology of systematic global calibration and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the range of conditions of implant and diffusion processes in the fabrication lines, the dominant diffusion phenomenon in each process temperature region has been determined. Using the dual-pearson implant model and fully-coupled diffusion model, the calibration was performed systematically. We applied the globally calibrated process simulator parameters to memory and logic devices to predict the optimum process conditions for target device characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.