Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Methodology of Systematic Global Calibration for Process Simulator

  • Lee, Jun-Ha (Department of Computer System Engineering, Sangmyung University) ;
  • Lee, Hoong-Joo (Department of Computer System Engineering, Sangmyung University)
  • Published : 2004.10.01
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Abstract

This paper proposes a novel methodology of systematic global calibration and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the range of conditions of implant and diffusion processes in the fabrication lines, the dominant diffusion phenomenon in each process temperature region has been determined. Using the dual-pearson implant model and fully-coupled diffusion model, the calibration was performed systematically. We applied the globally calibrated process simulator parameters to memory and logic devices to predict the optimum process conditions for target device characteristics.

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References

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