• Title/Summary/Keyword: Differential Impedance

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A Transformer-Matched Millimeter-Wave CMOS Power Amplifier

  • Park, Seungwon;Jeon, Sanggeun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.687-694
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    • 2016
  • A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

Analysis of Electromagnetic Characteristics of a Grounded Slab and a Parallel-Plate Structure Using the SDDI Technique

  • Choi, Jae-Hoon;Kahng, Sung-Tek
    • ETRI Journal
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    • v.23 no.2
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    • pp.71-76
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    • 2001
  • In this paper, the electromagnetic characteristics of a grounded slab and a parallel-plate structure are analyzed by the Spline-type Divided-Difference Interpolation (SDDI) technique. The technique efficiently evaluates the MoM impedance matrix elements of the multifold spectral or spatial domain integrals or summation in integro differential equations. The numerical results of the proposed method agree well with those of the corresponding literatures.

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Design of V-Band Differential Low Noise Amplifier Using 65-nm CMOS (65-nm CMOS 공정을 이용한 V-Band 차동 저잡음 증폭기 설계)

  • Kim, Dong-Wook;Seo, Hyun-Woo;Kim, Jun-Seong;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.10
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    • pp.832-835
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    • 2017
  • In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.

A CMOS LC VCO with Differential Second Harmonic Output (차동 이차 고조파 출력을 갖는 CMOS LC 전압조정발진기)

  • Kim, Hyun;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.6 s.360
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    • pp.60-68
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    • 2007
  • A technique is presented to extract differential second harmonic output from common source nodes of a cross-coupled P-& N-FET oscillator. Provided the impedances at the common source nodes are optimized and the fundamental swing at the VCO core stays in a proper mode, it is found that the amplitude and phase errors can be kept within $0{\sim}1.6dB$ and $+2.2^{\circ}{\sim}-5.6^{\circ}$, respectively, over all process/temperature/voltage corners. Moreover, an impedance-tuning circuit is proposed to compensate any unexpectedly high errors on the differential signal output. A Prototype 5-GHz VCO with a 2.5-Hz LC resonator is implemented in $0.18-{\mu}m$ CMOS. The error signal between the differential outputs has been measured to be as low as -70 dBm with the aid of the tuning circuit. It implies the push-push outputs are satisfactorily differential with the amplitude and phase errors well less than 0.34 dB and $1^{\circ}$, respectively.

Impedance Parameters of Electrical Double Layer I. A Determination Method of Electrolytic Cell Impedance Parameter on the Platinum Electrode (전기이중층의 임피던스 파라미터 I. 백금전극을 사용한 전해쎌 임피던스 파라미터의 결정방법)

  • Kum-Sho Hwang;Un-Sik Kim
    • Journal of the Korean Chemical Society
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    • v.30 no.3
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    • pp.273-281
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    • 1986
  • This study is focused on the correct measurement of the equations for the determination of the impedance parameters-the differential capacity of the double layer $C_d$, solution resistance $R_Q$, transfer resitance $R_i$, and adsorption pseudcapacity $C_{\phi}$/ The application of only an imaginary part of complex function of ${\omega}$ at the sinusoidal steady state indicates the following equations of total impedance: at low frequency $|Z_{LF}|=1/{\omega}_1\;C_{\phi}\;{\sqrt{1+{{\omega}_1}^2/{\omega}^2}$, at high frequency $|Z_{HF}|={\omega}_2/({\omega}_1{\omega}_3C{\phi})({\omega}^2+{{\omega}_2}^2)\;{\sqrt{{({\omega}^2+{\omega}_2{\omega}_3)}^2+{({\omega}_2{\omega}-{\omega_3{\omega})^2}}$. The values of the total impedance of cell, phase angle, and cell current that are necessary for the calculations of impedance parameters were experimentally measured from 200 to 6000Hz for the following supporting electrolytes, 0.5M $Na_2SO_4$, 1M NaCl, 19.373% sea water, 1M HCl, 1M $KNO_3$ and for $10^{-2}M$ KI and 60mM DBNA (Di-iso-Butylnitrosoamine) in these supporting electrolytes. The derived equations in this study shows that the values of impedance parameters of $C_d,\;C_{\phi},\;R_i\;and\;R_Q\;are\;15{\sim}40\;{\mu}F/cm^2,\;162{\sim}758\;{\mu}F/cm^2\;11.5{\sim}57.6\;ohm{\cdot}cm^2\;and\;0.5{\times}10^{-2}{\sim}4.1{\times}10^{-2}\;ohm{\cdot}cm^2$ respectively.

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Design of High-Speed Multi-Layer PCB for Ultra High Definition Video Signals (UHD급 영상구현을 위한 다층인쇄회로기판의 특성 임피던스 분석에 관한 연구)

  • Jin, Jong-Ho;Son, Hui-Bae;Rhee, Young-Chul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.7
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    • pp.1639-1645
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    • 2015
  • In UHD high-speed video transmission system, when a signal within certain frequency region coincides electrically and structurally, the system becomes unstable because the energy is concentrated, and signal flux is interfered and distorted. For the instability, power integrity analysis should be conducted. To remove the signal distortion for MLB, using a high-frequency design technique for EMI phenomenon, EMI which radiates electromagnetic energy fluxed into power layer was analyzed considering system stabilization. In this paper, we proposed an adaptive MLB design method which minimizes high-frequency noise in MLB structure, enhances signal integrity and power integrity, and suppresses EMI. The characteristic impedance for multi-layer circuit board proposed in this study were High-Speed Video Differential Signaling(HSVDS) line width w = 0.203, line gap d = 0.203, beta layer height h = 0.145, line thickness t = 0.0175, dielectric constant εr = 4.3, and characteristic impedance Zdiff = 100.186Ω. When high-speed video differential signal interface board was tested with optimized parameters, the magnitude of Eye diagram output was 672mV, jittering was 6.593ps, transmission frequency was 1.322GHz, signal to noise was 29.62dB showing transmission quality improvement of 10dB compared to previous system.

The design of Fully Differential CMOS Operational Amplifier (Fully Differential CMOS 연산 증폭기 설계)

  • Ahn, In-Soo;Song, Seok-Ho;Choi, Tae-Sup;Yim, Tae-Soo;Sakong, Sug-Chin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.6
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    • pp.85-96
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    • 2000
  • It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

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Lithium Ion Concentration Dependant Ionic Conductivity and Thermal Properties in Solid Poly(PEGMA-co-acrylonitrile) Electrolytes

  • Kim, Kyung-Chan;Roh, Sae-Weon;Ryu, Sang-Woog
    • Journal of Electrochemical Science and Technology
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    • v.1 no.1
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    • pp.57-62
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    • 2010
  • The lithium ion concentration dependant ionic conductivity and thermal properties of poly(ethylene glycol) methyl ether methacrylate (PEGMA)/acrylonitrile-based copolymer electrolytes with $LiClO_4$ have been studied by differential scanning calorimetry (DSC), linear sweep voltammetry (LSV) and AC complex impedance measurements. In systems with 11 wt% of acrylonitrile all liquid electrolytes were obtained regardless of lithium ion concentration. Complex impedance measurements with stainless steel electrodes give ambient ionic conductivities $8.1\times10^{-6}\sim1.4\times10^{-4}S cm^{-1}$. On the other hand, a hard and soft films at ambient temperature were obtained in copolymer electrolyte system consists of 15 wt% acrylonitrile with 6 : 1 and 3 : 1 of [EO] : [Li] ratio, respectively. DSC measurements indicate the crystalline melting temperature of poly(PEGMA) disappeared completely after addition of $LiClO_4$ in this system due to the complex formation between ethylene oxide (EO) unit and lithium salt. As a result, free standing film with room temperature ionic conductivity of $1.7\times10^{-4}S cm^{-1}$ and high electrochemical stability up to 5.5V was obtained by controlling of acrylonitrile and lithium salt concentration.

An Unbalanced A.C. Bridge with High Voltage Source for the Conductometric Determination of Sulfur in Iron Ores (일정전류 비평행교류브릿지에 의한 전도도측정과 황의 정량)

  • Czae, Myung-Zoon;Choe, Gyu-Won
    • Journal of the Korean Chemical Society
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    • v.14 no.4
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    • pp.327-332
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    • 1970
  • A simple and convenient device for deflection-type direct reading the variations in electrolytic conductance is described and applied to the analysis of sulfur by combustion-$H_2O_2$ oxidation method. The apparatus consisted of a high resistance-ratio bridge in which the other adjacent arms are the differential cells. By adopting unusually high a-c voltage source for the bridge excitation, the a-c method for unbalanced bridge is established, decreased sensitivity owing to reduced bridge factor, 0.01, is overcome and also the absolute sensitivity and linearity are greatly improved. Over 50% variations in impedance of the balanced cell, within 1% deviation from the linearity can be attained with a volt (rms)order of output which was detected directly with VTVM without further amplification. Analysis of the bridge shows that these useful features are natural result of the constant current character of the high source impedance generator and the performance of the device agreed with the theoretical predictions. A standard procedure for the rapid analysis of sulfur using the bridge is also given, the analytical accuracy was approximately 1%. A determination takes not more than 5 minutes.

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A 5-GHz Band CCNF VCO Having Phase Noise of -87 dBc/Hz at 10 kHz Offset

  • Lee, Ja-Yol;Lee, Sang-Heung;Kang, Jin-Young;Kim, Bo-Woo;Oh, Seung-Hyeub
    • Journal of electromagnetic engineering and science
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    • v.4 no.3
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    • pp.137-142
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    • 2004
  • In this paper, we present a new current-current negative feedback(CCNF) differential voltage-controlled oscillator (VCO) with 1/f induced low-frequency noise suppressed. By means of the CCNF, the 1/f induced low-frequency noise is removed from the proposed CCNF VCO. Also, high-frequency noise is stopped from being down-converted into phase noise by means of the increased output impedance through the CCNF and the feedback capacitor $C_f. The proposed CCNF VCO represents 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed CCNF VCO is measured as - 87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed CCNF VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of - 12 dBm.