• Title/Summary/Keyword: Die Offset

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Design of a Low-Power 500MHz CMOS PLL Frequency Synthesizer (저전력 500MHz CMOS PLL 주파수합성기 설계)

  • Kang, Ki-Sub;Oh, Gun-Chang;Park, Jong-Tae;Yu, Chong-Gun
    • Proceedings of the KIEE Conference
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    • 2006.10c
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    • pp.485-487
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    • 2006
  • This paper describes a frequency synthesizer designed in a $0.25{\mu}m$ CMOS technology for using local oscillators for the IF stages. The design is focused mainly on low-power characteristics. A simple ring-oscillator based VCO is used, where a single control signal can be used for variable resistors. The designed PLL includes all building blocks for elimination of external components, other than the crystal, and its operating frequency can be programmed by external data. It operates in the frequency range of 250MHz to 800MHz and consumes l.08mA at 500MHz from a 2.5V supply. The measured phase noise is -85dBc/Hz in-band and -105dBc/Hz at 1MHz offset. The die area is $1.09mm^2$

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A CMOS Frequency Synthesizer Block for MB-OFDM UWB Systems

  • Kim, Chang-Wan;Choi, Sang-Sung;Lee, Sang-Gug
    • ETRI Journal
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    • v.29 no.4
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    • pp.437-444
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    • 2007
  • A CMOS frequency synthesizer block for multi-band orthogonal frequency division multiplexing ultra-wideband systems is proposed. The proposed frequency synthesizer adopts a double-conversion architecture for simplicity and to mitigate spur suppression requirements for out-of-band interferers in 2.4 and 5 GHz bands. Moreover, the frequency synthesizer can consist of the fewest nonlinear components, such as divide-by-Ns and a mixer with the proposed frequency plan, leading to the generation of less spurs. To evaluate the feasibility of the proposed idea, the frequency synthesizer block is implemented in 0.18-${\mu}m$ CMOS technology. The measured sideband suppression ratio is about 32 dBc, and the phase noise is -105 dBc/Hz at an offset of 1 MHz. The fabricated chip consumes 17.6 mA from a 1.8 V supply, and the die-area including pads is $0.9{\times}1.1\;mm^2$.

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Comparative Study of CL Z-map Modeling for 3-Axis NC Machining (3축 NC 가공을 위한 CL Z-map 모델링 방법의 비교 연구)

  • Park, Jung-Whan;Chung, Yun-Chan;Choi, Byoung-Kyu
    • Journal of Korean Institute of Industrial Engineers
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    • v.26 no.4
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    • pp.325-335
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    • 2000
  • Gouge-free tool-path generation is an important issue in mold & die machining and researches on cutter interference avoidance can be found in many articles. One of the various methods is construction of tool-offset surface of cutter-location (CL) surface on which the cutter-center point (CL-point) locates. Provided that the CL surface is represented in a suitable form, cutter-interference avoidance can be performed without the burden of computing CL data for every cutter-contact (CC) point. In the paper, various methods of constructing a CL surface in the z-map form are presented, where z-map is a special form of discrete nonparametric representation in which the height values at grid points on the xy-plane are stored as a 2D array z[i,j].

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A Dual-Mode 2.4-GHz CMOS Transceiver for High-Rate Bluetooth Systems

  • Hyun, Seok-Bong;Tak, Geum-Young;Kim, Sun-Hee;Kim, Byung-Jo;Ko, Jin-Ho;Park, Seong-Su
    • ETRI Journal
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    • v.26 no.3
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    • pp.229-240
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    • 2004
  • This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

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An Efficient Coarse Tuning Scheme for Fast Switching Frequency Synthesizer in PHS Applications (PHS 어플리케이션에서의 빠른 스위칭 주파수 합성기를 위한 효율적인 Coarse Tuning 방법)

  • Park Do-Jin;Jung Sung-Kyu;Kim Jin-Kyung;Pu Young-Gun;Jung Ji-Hoon;Lee Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.9 s.351
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    • pp.10-16
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    • 2006
  • This paper presents a fast switching CMOS frequency synthesizer with a new coarse tuning scheme for PHS applications. The proposed coarse tuning method selects the optimal tuning capacitances of the LC-VCO to optimize the phase noise and the lock-time. The measured lock-time is about $20{\mu}s$ and the phase noise is -121dBc/Hz at 600kHz offset. This chip is fabricated with $0.25{\mu}m$ CMOS technology, and the die area is $0.7mm{\times}2.1mm$. The power consumption is 54mW at 2.7V supply voltage.

Fully Integrated Design of a Low-Power 2.5GHz/0.5GHz CMOS Dual Frequency Synthesizer (저전력 2.5GHz/0.5GHz CMOS 이중 주파수합성기 완전 집적화 설계)

  • Kang, Ki-Sub;Oh, Gun-Chang;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.11 no.1 s.20
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    • pp.15-23
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    • 2007
  • This paper describes a dual frequency synthesizer designed in a 0.2$\mu$m CMOS technology for wireless LAN applications. The design is focused mainly on low-power characteristics. Power dissipation is minimized especially in VCO and prescaler design. The designed synthesizer includes all building blocks for elimination of external components, other than the crystal. Its operating frequency can be programmed by external data. It operates in the frequency range of 2.3GHz to 2.7GHz (RF) and 250MHz to 800MHz (IF) and consumes 5.14mA at 2.5GHz and 1.08mA at 0.5GHz from a 2.5V supply. The measured phase noise is -85dBc/Hz in-band and -105dBc/Hz at 1MHz offset at IF band. The die area is 1.7mm$\times$1.7mm.

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Design of eccentric forging process for camber bolts using finite element method (유한요소법을 이용한 캠버볼트의 편심단조 공정설계)

  • Kim, Kwan-Woo;Qiu, Yuan-Gen;Cho, Hae-Yong
    • Journal of Advanced Marine Engineering and Technology
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    • v.40 no.4
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    • pp.320-324
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    • 2016
  • A new eccentric forging process for camber bolts has been suggested in this study. The camber bolt is manufactured by a two-step process: the typical forging process for normal bolts and the trimming process for the eccentric flange. The processes are performed under high forging load and generate a large amount of chip during trimming. A new forging process has been required in order to overcome these problems. The eccentric forging is the new process in which the load axis is offset from the central axis, as against central load applied in a typical forging process. The eccentric forging process could reduce forging load and save the amount of chip. In order to manufacture camber bolts by an optimum process, it is required to adjust the geometry of eccentric die and the offset from the central axis.

A Fully Integrated Ku-band CMOS VCO with Wide Frequency Tuning (Ku-밴드 광대역 CMOS 전압 제어 발진기)

  • Kim, Young Gi;Hwang, Jae Yeon;Yoon, Jong Deok
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.12
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    • pp.83-89
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    • 2014
  • A ku-band complementary cross-coupled differential voltage controlled oscillator is designed, measured and fabricated using $0.18-{\mu}m$ CMOS technology. A 2.4GHz of very wide frequency tuning at oscillating frequency of 14.5GHz is achieved with presented circuit topology and MOS varactors. Measurement results show -1.66dBm output power with 18mA DC current drive from 3.3V power supply. When 5V is applied, the output power is increased to 0.84dBm with 47mA DC current. -74.5dBc/Hz phase noise at 100kHz offset is measured. The die area is $1.02mm{\times}0.66mm$.

Robotized Filament Winding of Full Section Parts: Comparison Between Two Winding Trajectory Planning Rules

  • Sorrentino, L.;Polini, W.;Carrino, L.;Anamateros, E.;Paris, G.
    • Advanced Composite Materials
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    • v.17 no.1
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    • pp.1-23
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    • 2008
  • Robotized filament winding technology involves a robot that winds a roving impregnated by resin on a die along the directions of stresses to which the work-piece is submitted in applications. The robot moves a deposition head along a winding trajectory in order to deposit roving. The trajectory planning is a very critical aspect of robotized filament winding technology, since it is responsible for both the tension constancy and the winding time. The present work shows two original rules to plan the winding trajectory of structural parts, whose shape is obtained by sweeping a full section around a 3D curve that must be closed and not crossing in order to assure a continuous winding. The first rule plans the winding trajectory by approximating the part 3D shape with straight lines; it is called the discretized rule. The second rule defines the winding trajectory simply by offsetting a 3D curve that reproduces the part 3D shape, of a defined distance; it is called the offset rule. The two rules have been compared in terms of roving tension and winding time. The present work shows how the offset rule enables achievement of both the required aims: to manufacture parts of high structural performances by keeping the tension on the roving near to the nominal value and to markedly decrease the winding time. This is the first step towards the optimization of the robotized filament winding technology.

A 12 mW ADPLL Based G/FSK Transmitter for Smart Utility Network in 0.18 ㎛ CMOS

  • Park, Hyung-Gu;Kim, Hongjin;Lee, Dong-Soo;Yu, Chang-Zhi;Ku, Hyunchul;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.272-281
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    • 2013
  • This paper presents low power frequency shift keying (FSK) transmitter using all digital PLL (ADPLL) for smart utility network (SUN). In order to operate at low-power and to integrate a small die area, the ADPLL is adopted in transmitter. The phase noise of the ADPLL is improved by using a fine resolution time to digital converter (TDC) and digitally controlled oscillator (DCO). The FSK transmitter is implemented in $0.18{\mu}m$ 1-poly 6-metal CMOS technology. The die area of the transmitter including ADPLL is $3.5mm^2$. The power consumption of the ADPLL is 12.43 mW. And, the power consumptions of the transmitter are 35.36 mW and 65.57 mW when the output power levels are -1.6 dBm and +12 dBm, respectively. Both of them are supplied by 1.8 V voltage source. The frequency resolution of the TDC is 2.7 ps. The effective DCO frequency resolution with the differential MOS varactor and sigma-delta modulator is 2.5 Hz. The phase noise of the ADPLL output at 1.8 GHz is -121.17 dBc/Hz with a 1 MHz offset.