• Korean Journal of Materials Research
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• v.17 no.7
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• pp.352-357
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• 2007

Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.122-122
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• 2000

Polishing work of a free-curved surface die demands simple and repetitive operations but requires a considerable amount of time for high precision. In out previous study, to reduce the polishing time and solve the problem of the shortage of skilled workers, the automatic polishing system was developed. However, in the polishing process of die, workers have to stay still in factory to monitor the polishing process for a long time in the poor environment. Therefore, this study proposes the remote operation and monitoring system of the automatic polishing robot. The developing system offer worker monitoring functions and teleoperating functions, as following: system state check, manual manipulation mode, automatic mode, manual teaching mode, automatic teaching mode, simulation by virtual manufacturing device. And automatic teaching system is developed to easily obtain a teaching data.

• Journal of the Korean Society of Industry Convergence
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• v.4 no.3
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• pp.339-347
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• 2001

Automatic automobile has been studied as the alternative energy system and the production flow automation device recently. But this is dependent on the import production, and its position cannot be controlled free from the fixed path. It is difficult to control the automobile position because of the eccentricity of inertia monent, slip and roughness between wheel and road surface. This problems is solved for the controller to be feedbacked the data of the multi-sensor system consisting of the rotary encoder and electronic compass. The proportional Integrated controller in the modified Ziegler-Nichols method is made up with Hitachi 7034 microprocessor. To the real time control the mechanical, electrical and electronic hardware and software device is produced by myself. The RF data of automobile speed and position is supplied to the remote PC to be displayed the automobile condition. By the experinent of the forward, spin, point path planning, it is known for autombile.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.73-77
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• 2000

A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1568-1569
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• 2007

TFT-LCD used in display area is not a light-emissive device itself but TFT-LCD can overcome through the employ of the backlight unit (BLU). BLU is very important device in TFT-LCD system. However, the old-fashion BLU of CCFL type is crucible to the health due to the contained material, mercury (Hg). Moreover, strong temperature dependency of lamp employed with Hg becomes the other disadvantage in practical usage. To solve these problems, Hg-Free lamp with strong thermal resistance property is required to displace the Hg lamp. We studied optical and electrical properties of Xe-Ne-He mixed gas that is dependent on change of mixed ratio and pressure. In our results, the designed lamp without the phosphorescent material has the lowest firing voltage at xe 50%(Ne:He=9:1).

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.5
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• pp.906-911
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• 2008

This paper designed Simulik Model to cancel the carrier frequency offset in OFDM using CORDIC Algorithm and evaluated its performance. And Simulink Model compared with Xilinx System Generator Model for FPGA implementation. As a result of simulation, we confirmed that both model is error free by CORDIC when offset frequency is lower than $10^5MHz$. Also, we verified the performance through Hardware Co-simulation with Xilinx Spartan3 xc3s1000 fg676-4 Target Device, and timing analysis and resource estimation.

• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.