• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.23 no.11
• /
• pp.1481-1489
• /
• 1999

The sliding-belt concept introduced by Bechert et al. (AIAA J., Vol. 34, pp. 1072~1074) is numerically applied to a turbulent boundary layer flow for the skin-friction reduction. The sliding belt is moved by the shear force exerted on the exposed surface of the belt without other dynamic energy input. The boundary condition at the sliding belt is developed from the force balance. Direct numerical simulations are performed for a few cases of belt configuration. In the ideal case where the mechanical losses associated with the belt can be ignored, the belt velocity increases until the integration of the shear stress over the belt surface becomes zero, resulting in zero skin friction on the belt. From practical consideration of losses occurred In the belt device, a few different belt velocities are given to the sliding belt. It is found that the amount of drag reduction is proportional to the belt velocity.

• Proceedings of the Korean Society for Emotion and Sensibility Conference
• /
• 2002.05a
• /
• pp.221-228
• /
• 2002

The NAVER is based on a cluster of low-cost personal computers. The goal of NAVER is to provide flexible, extensible, scalable and re-configurable framework for the diverse virtual environments especially for Gamsung research experiments. Personal computers are divided into three servers are according to their specific functions: Render Server, Device Server and Control Server. While Device Server contains external modules requiring event-based communication for the integration, Control Server contains external modules requiring synchronous communication every frame. And, the Render Server consists of 5 managers: Scenario Manager, Event Manger, Command Manager, Interaction Manager and Sync Manager. In this paper, we discuss NAVER as effective distributed system and its application to Gamsung experiment.

• Vacuum Magazine
• /
• v.1 no.3
• /
• pp.21-27
• /
• 2014

Advanced process and integration for future semiconductor devices is approaching the physical limit. The new materials with low dimensional structure have recently attracted great attention due to its expandability for the future electronic devices. In order to apply the materials to future semiconductor devices, the control of carrier scattering is critical issue. That is, the carrier scattering with physical quantity in low dimensional structure significantly modulates the device characteristics. We introduce the role of defect in several future semiconductor materials and devices. The analysis of defect in the structure becomes the most important techniques. In particular, surface defect in nano structures totally controls the device characteristics. The changes imply that the metrology field is leading the future industry for semiconductor.

• Investigative Magnetic Resonance Imaging
• /
• v.25 no.4
• /
• pp.218-228
• /
• 2021

Due to their high degree of freedom to transfer and acquire light, fiber optics can be used in the presence of strong magnetic fields. Hence, optical sensing and imaging based on fiber optics can be integrated with magnetic resonance imaging (MRI) diagnostic systems to acquire valuable information on biological tissues and organs based on a magnetic field. In this article, we explored the combination of MRI and optical sensing/imaging techniques by classifying them into the following topics: 1) functional near-infrared spectroscopy with functional MRI for brain studies and brain disease diagnoses, 2) integration of fiber-optic molecular imaging and optogenetic stimulation with MRI, and 3) optical therapeutic applications with an MRI guidance system. Through these investigations, we believe that a combination of MRI and optical sensing/imaging techniques can be employed as both research methods for multidisciplinary studies and clinical diagnostic/therapeutic devices.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2002.11a
• /
• pp.281-286
• /
• 2002

An existent hoist drive system is using each different drive equipment in control of Hoisting, traveling(T/L), traversing(T/S) driving, so there are much energy losses because of excessive weight. Also, power circuits are using relay contact, so working environment are frequent secession accident etc.. by shock on unfavorable condition, and there is danger of safety accident, maintenance has frequent problem and so on. To solve these problem, it is integrated each driving power supply in drive system for hoist control and drive, utility power supply etc.. by single device in this research. The power circuit is consisted of non-contact circuit applying to bidirectional voltage controller circuit using thyristor that is power semiconductor switching device

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.446-450
• /
• 2007

It is strongly expected that inkjet printing method will be play and important role on printable electronics such as 3D integration of embedded ceramic devices(capacitor, resistor, inductor and electrode or circuit), Si-TFT and organic TFT including display C/F, RFID, FPCB, and etc. A inkjet printing method had been center of attention to strengthen the competitiveness of flat panel display on market and to open the new world of manufacturing process of printable electronics. We will survey the industrial tendency of printable electronics and flat panel display including some examples of inkjet printing and present the considerable points of inkjet printing method and some role of materials for successful inkjet printing.

• 제어로봇시스템학회:학술대회논문집
• /
• 2001.10a
• /
• pp.181.3-181
• /
• 2001

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. In this paper, to do research for medical artificial organs as well as principal parts living body thin film application, electrical properties of L-$\alpha$-DLPC Langmuir(L) films were investigated a displacement current measuring technique with pressure stimulation. We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of L-$\alpha$-DLPC deposited by LB method ...

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.3
• /
• pp.197-204
• /
• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Journal of the Microelectronics and Packaging Society
• /
• v.23 no.4
• /
• pp.25-29
• /
• 2016

The semiconductor industry has been developed mainly by micronization process due to many advantages of miniaturization of devices. Mass production of semiconductors of 10 nm class has been started recently, and it is expected that the technology generation of 5 nm & 7 nm technology will come. However, excessive linewidth reduction affects physical limits and device reliability. To solve these problems, new process technology development and new concept devices are being studied. In this review, we introduce the next generation technology and introduce the advanced research for the new concept device.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.3
• /
• pp.72-77
• /
• 2016

As the semiconductor production technology has gradually developed and intra-market competition has grown fiercer, the caliber of Si Wafer for semiconductor production has increased as well. And semiconductors have become integrated with higher density. Presently the Si Wafer caliber has reached up to 450 mm and relevant production technology has been advanced together. Electrostatic chuck is an important device utilized not only for the Wafer transport and fixation but also for the heat treatment process based on plasma. To effectively control the high calories generated by plasma, it employs a refrigerant-based cooling method. Amid the enlarging Si Wafers and semiconductor device integration, effective temperature control is essential. Therefore, uniformed temperature distribution in the electrostatic chuck is a key factor determining its performance. In this study, the form of refrigerant flow channel will be investigated for uniformed temperature distribution in electrostatic chuck.