• 한국재료학회지
• /
• 제18권3호
• /
• pp.148-152
• /
• 2008

A new cost-effective atomic layer deposition (ALD) technique, known as Proximity-Scan ALD (PS-ALD) was developed and its benefits were demonstrated by depositing $Al_2O_3$ and $HfO_2$ thin films using TMA and TEMAHf, respectively, as precursors. The system is consisted of two separate injectors for precursors and reactants that are placed near a heated substrate at a proximity of less than 1 cm. The bell-shaped injector chamber separated but close to the substrate forms a local chamber, maintaining higher pressure compared to the rest of chamber. Therefore, a system configuration with a rotating substrate gives the typical sequential deposition process of ALD under a continuous source flow without the need for gas switching. As the pressure required for the deposition is achieved in a small local volume, the need for an expensive metal organic (MO) source is reduced by a factor of approximately 100 concerning the volume ratio of local to total chambers. Under an optimized deposition condition, the deposition rates of $Al_2O_3$ and $HfO_2$ were $1.3\;{\AA}/cycle$ and $0.75\;{\AA}/cycle$, respectively, with dielectric constants of 9.4 and 23. A relatively short cycle time ($5{\sim}10\;sec$) due to the lack of the time-consuming "purging and pumping" process and the capability of multi-wafer processing of the proposed technology offer a very high through-put in addition to a lower cost.

• 대한기계학회논문집
• /
• 제11권3호
• /
• pp.501-508
• /
• 1987

본 연구에서는 입자발생 장치를 유동층(fluidized bed)을 이용하여 만들었고 이것에 의해서 고온의 연소가스속으로 입자가 공급되므로, 종래의 초음파입자 발생기 나 오리피스진동입자 발생기등에서 일어나는 호학반응 및 입자상호간의 응집(coagul- ation)현상등을 되도록 없게 하여 순수한 구형입자에 대한 입자부착 효과를 볼 수 있 게 함으로써, 부착기구의 이해와 해석등을 한층 유리하게 한다. 그리고 공급되는 입 자의 크기의 범위를 직경 0.2$\mu\textrm{m}$~30$\mu\textrm{m}$ 정도로 광범위하게 다루어 비교적 간단하고 잘 정의된 층류 유동에서, (1) 미세입자의 경우 실시간(real time) 레이져 광반사법에 의 한 입자부착률의 온도구배 및 농도에 대한 효과를 실험하고, (2) 입자의 Counting/Si- zing 법에 의하여 입자크기에 따른 열확산 효과 및 관성충돌 효과 등을 볼 수 있게 한 다.

• 한국재료학회지
• /
• 제15권11호
• /
• pp.705-710
• /
• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• 한국원자력학회:학술대회논문집
• /
• 한국원자력학회 2005년도 춘계학술발표회
• /
• pp.291-292
• /
• 2005

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제3권1호
• /
• pp.1-12
• /
• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• 한국지하수토양환경학회:학술대회논문집
• /
• 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
• /
• pp.450-452
• /
• 2004

Using factor analysis and bivariate comparisons of major components in ground water, three geochemical processes were identified as controlling factors of ground water chemistry; 1) natural mineralization by water rock interactions, 2) effect of seawater which includes salinization by seawater near seashores and deposition of sea salt, and 3) nitrate contamination by N fertilization. Contribution of rainfall was also estimated from the measured composition of wet deposition. The geochemical processes were separated using total alkalinity as an indicator for natural mineralization, Cl for effect of seawater, and nitrate for N fertilization. Relatively high correlation of major components with nitrate suggests that nitrification of nitrogenous fertilizers significantly affects ground water chemistry. Total cations derived from nitrate sources have good linearity for nitrate in equivalent basis with a slope of 1.8, which is a mean of proton production coefficients in nitrification of two major compounds in nitrogenous fertilizers, ammonium and urea. Contribution of nitrate sources to base cations, Cl, and SO$_4$ in ground water was determined considering maximum contribution of natural mineralization to estimate a threshold of the effect of N fertilization for ground water chemistry, which shows W fertilization has a greatest effect than any other processes in ground water with nitrate concentration greater than 50 mg/L for Ca, Mg, Na and with concentration greater than 30 mg/L for Cl and SO$_4$.

• 한국환경보건학회지
• /
• 제28권2호
• /
• pp.183-192
• /
• 2002

Indoor air quality is affected by source strength of pollutants, ventilation rate, decay rate, outdoor level and so on. Although technologies exist to measure these factors directly, direct measurements of all factors are impractical in most field studies. The purpose of this study was to develop an alternative methods to estimate these factors by multiple measurements. Daily indoor and outdoor NO$_2$concentrations for 21 days in 20 houses in summer and winter, Seoul. Using a mass balance model and linear regression analysis, penetration factor (ventilation divided by sum of air exchange rate and deposition constant) and source strength factor(emission rate divided by sum of air exchange rate and deposition constant) were calculated. Subsequently, the ventilation and source strength were estimated. During sampling period, geometric mean of natural ventilation was estimated to be 1.10$\pm$1.53 ACH, assuming a residential NO$_2$decay rate of 0.8 hr$^{-1}$ in summer. In winter, natural ventilation was 0.75$\pm$1.31 ACH. And mean source strengths in summer and winter were 14.8ppb/hr and 22.4ppb/hr, respectively. Although the method showed similar finding previous studies, the study did not measure ACH or the source strength of the house directly. As validation of natural ventilations, infiltrations were measured with $CO_2$tracer gas in 18 houses. Relationship between ventilation and infiltration was statistically correlated (Pearson r=0.63, p=0.02).

• 한국전기전자재료학회논문지
• /
• 제23권3호
• /
• pp.211-215
• /
• 2010

Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

• Asian Journal of Atmospheric Environment
• /
• 제2권2호
• /
• pp.81-89
• /
• 2008

The numerical simulation of wind and ozone ($O_3$) transport in mountainous regions was performed with a computational fluid dynamics technique. A dry deposition model for $O_3$ was designed to estimate $O_3$ deposition in complex terrain, and the qualitative validity of the predicted $O_3$ concentration field was confirmed by comparison with observed data collected with passive samplers. The simulation revealed that wind velocity increases around ridge lines and peaks of mountains. The areas with strong wind corresponded well with the sites of tree decline at high altitudes, suggesting that it is an important factor in the localization of tree/forest decline. On the other hand, there is no direct relationship between forest decline and $O_3$ concentration. The $O_3$ concentration, however, tends to increase as wind velocity becomes higher, thus the $O_3$ concentration itself may be a potential secondary factor in the localized decline phenomena. While the diffusion flux of $O_3$ is not related to localized tree decline, the pattern of advection flux is related to those of high wind velocity and localized tree decline. These results suggest that strong wind with large advection flux of $O_3$ may play a key role in the promotion of tree/forest decline at high mountain ridges and peaks.

• Journal of Radiation Protection and Research
• /
• 제25권1호
• /
• pp.11-19
• /
• 2000

동적섭식경로모델 DYNACON에 대한 입력변수의 민감도 분석을 장반감기 핵종 $(^{137}Cs,\;^{90}Sr)$에 대해 침적시점의 함수로 평가하였다. 또한 장, 단기간 음식물 (곡류, 엽채류, 우유) 오염에 대한 입력변수의 영향이 고찰되었다. 입력변수는 LHS 기법으로 표본 추출되었으며, 민감도 지수는 PRCC로 나타냈다. 핵종과 음식물의 종류에 따른 민감도 지수는 침적시점 뿐 아니라 장, 단기간 오염에 있어서도 뚜렷이 다르게 나타났다. 작물의 성장기 침적의 경우 장, 단기간 오염 모두 잎흡수에 의한 오염 관련변수가 중요하였다. 또한 작물의 비성장기 침적의 경우 단기간 오염에 있어서도 잎흡수에 의한 오염 관련변수가 중요하였다. 장기간 오염의 경우 잎흡수에 의한 오염 관련변수의 영향은 줄고 뿌리흡수에 의한 오염 관련변수의 영향이 증가하였다. 특히 이러한 현상은 작물의 성장기 침적에 비해 비성장기 침적의 경우에, $^{l37}Cs$ 침적에 비해 $^{90}Sr$ 침적의 경우에 보다 뚜렷하였다. 목초의 성장기 침적의 경우 우유로의 핵종 전달계수, 젖소의 일일 목초 섭취량과 같은 가축 특성 관련변수가 상대적으로 우유의 오염에 중요한 입력변수로 나타났다.