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http://dx.doi.org/10.4313/JKEM.2010.23.3.211

Fabrication and Characterization of Bi2O3-MgO-ZnO-Nb2O5 Thin Films by Pulsed Laser Deposition  

Bae, Ki-Ryeol (동의대학교 나노공학과, 전자세라믹스센터)
Lee, Dong-Wook (동의대학교 나노공학과, 전자세라믹스센터)
Elanchezhiyan, J. (동의대학교 나노공학과, 전자세라믹스센터)
Lee, Won-Jae (동의대학교 나노공학과, 전자세라믹스센터)
Bae, Yun-Mi (동의대학교 나노공학과, 전자세라믹스센터)
Shin, Byoung-Chul (동의대학교 나노공학과, 전자세라믹스센터)
Yoon, Soon-Gil (충남대학교 나노공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.3, 2010 , pp. 211-215 More about this Journal
Abstract
Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.
Keywords
PLD; BMZN thin films; Dielectric properties; Pyrochlore;
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